Gehäuseinformationen
| Gehäuse | Pins SOIC (DW) | 16 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.000 | LARGE T&R |
Merkmale von ISO7421E-Q1
- Qualified for automotive applications
- AEC-Q100
Qualified with the following results:
- Device temperature grade 1: -40°C to +125°C ambient operating temperature range
- Device HBM ESD classification level H3A
- Device CDM ESD classification level C4
- Propagation delay less than 20 ns
- Low power consumption
- Safety and regulatory
approvals
- 4242 VPK Isolation per VDE, 2.5 kVrms isolation per UL 1577, CSA approved per IEC 60950-1 and IEC 61010-1 End Equipment Standards
- 50 kV/µs Transient immunity typical
- Operates from 3.3 V or 5 V Supply and logic levels
Beschreibung von ISO7421E-Q1
The ISO7421E-Q1 provides double galvanic isolation of up to 2.5 KVrms for 1 minute per UL. This digital isolator has two isolation channels in a bi-directional configuration. Each isolation channel has a logic input and output buffer separated by a silicon oxide (SiO2) insulation barrier. Used in conjunction with isolated power supplies, these devices prevent noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry.
The devices have TTL input thresholds and require two supply voltages, 3.3 V or 5 V, or any combination. All inputs are 5-V tolerant when supplied from a 3.3-V supply.
Note: The ISO7421E-Q1 is specified for signaling rates up to 50 Mbps. Due to their fast response time, under most cases, these devices will also transmit data with much shorter pulse widths. Designers should add external filtering to remove spurious signals with input pulse duration < 20 ns if desired.