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LM5105

AKTIV

Halbbrücken-Gate-Treiber, 1,8 A, 1,6 A, 100 V, mit 8-V-UVLO und programmierbarer Totzeit

Produktdetails

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.026 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.026 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
WSON (DPR) 10 16 mm² (4 mm × 4 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1.8-A Peak Gate Drive Current
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Integrated Bootstrap Diode
  • Single TTL Compatible Input
  • Programmable Turnon Delays (Dead Time)
  • Enable Input Pin
  • Fast Turnoff Propagation Delays (26 ns Typical)
  • Drives 1000 pF With 15-ns Rise and Fall Time
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Package: Thermally Enhanced 10-Pin WSON
    (4 mm × 4 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1.8-A Peak Gate Drive Current
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Integrated Bootstrap Diode
  • Single TTL Compatible Input
  • Programmable Turnon Delays (Dead Time)
  • Enable Input Pin
  • Fast Turnoff Propagation Delays (26 ns Typical)
  • Drives 1000 pF With 15-ns Rise and Fall Time
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Package: Thermally Enhanced 10-Pin WSON
    (4 mm × 4 mm)

The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.

The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.

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LM2104 AKTIV Halbbrücken-Gate-Treiber, 107 V, 0,5 A/0,8 A, mit 8-V-UVLO, Totzeit und Abschaltung More recent half-bridge driver with a single input and fixed deadtime
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt LM5105 100-V Half-Bridge Gate Driver With Programmable Dead Time datasheet (Rev. E) PDF | HTML 25.08.2016
Anwendungshinweis Benefits and Use of Single Input Gate Drivers with Programmable Dead Time PDF | HTML 23.04.2025
Anwendungshinweis Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25.03.2024
Anwendungshinweis Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24.01.2024
Anwendungshinweis Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08.09.2023
Anwendungshinweis Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17.02.2022
Anwendungshinweis Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 07.04.2021
Anwendungshinweis Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12.05.2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22.10.2019
Whitepaper Power Electronics in Motor Drives: Where is it? (Rev. A) 01.10.2019
Anwendungshinweis Maximizing DC/DC converter designs with UCC27282 18.01.2019
Anwendungshinweis UCC27282 Improving motor drive system robustness 11.01.2019
Weitere Dokumente Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29.10.2018

Design und Entwicklung

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Simulationsmodell

LM5105 PSpice Transient Model (Rev. A)

SNVM166A.ZIP (49 KB) - PSpice-Modell
Unterstützte Produkte und Hardware
Simulationsmodell

LM5105 TINA-TI Transient Reference Design

SNVM361.TSC (576 KB) - TINA-TI-Referenzdesign
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Simulationsmodell

LM5105 TINA-TI Transient Spice Model

SNVM362.ZIP (11 KB) - TINA-TI Spice-Modell
Unterstützte Produkte und Hardware
Simulationsmodell

LM5105 Unencrypted PSpice Transient Model

SNVMAC7.ZIP (2 KB) - PSpice-Modell
Unterstützte Produkte und Hardware
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
WSON (DPR) 10 Ultra Librarian

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