LM5100A

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Halbbrücken-Gate-Treiber, 3 A, 100 V, mit 8 V UVLO und CMOS-Eingängen

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Datenblatt

document-pdfAcrobat LM5100A/B/C, LM5101A/B/C 3-A, 2-A, and 1-A High-Voltage, High-Side and Low-Side Gate Drivers datasheet (Rev. Q) (Englisch) PDF | HTML

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Alternativen vergleichen

Drop-In-Ersatz mit gegenüber dem verglichenen Baustein verbesserter Funktionalität.

UCC27200A

AKTIV

Halbbrücken-Gate-Treiber, 120 V, 3 A, mit 8 V UVLO, negativer Spannungsbehandlung und CMOS-Eingängen Newer version with improved specs.

LM5100A

AKTIV

Datenblatt

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Produktdetails

Bootstrap supply voltage (max) (V)

100

Power switch

MOSFET

Input supply voltage (min) (V)

9

Input supply voltage (max) (V)

14

Peak output current (A)

3

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

8

Rating

Catalog

Propagation delay time (µs)

0.025

Rise time (ns)

10

Fall time (ns)

10

Iq (mA)

0.01

Input threshold

CMOS

Channel input logic

CMOS

Switch node voltage (V)

-1

Driver configuration

Dual, Independent

Bootstrap supply voltage (max) (V)

100

Power switch

MOSFET

Input supply voltage (min) (V)

9

Input supply voltage (max) (V)

14

Peak output current (A)

3

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

8

Rating

Catalog

Propagation delay time (µs)

0.025

Rise time (ns)

10

Fall time (ns)

10

Iq (mA)

0.01

Input threshold

CMOS

Channel input logic

CMOS

Switch node voltage (V)

-1

Driver configuration

Dual, Independent

HSOIC (DDA)

8

29.4 mm² (4.9 mm × 6 mm)

SOIC (D)

8

29.4 mm² (4.9 mm × 6 mm)

WSON (DPR)

10

16 mm² (4 mm × 4 mm)

Drives Both a High-Side and Low-Side N-Channel
MOSFETs
Independent High- and Low-Driver Logic Inputs
Bootstrap Supply Voltage up to 118 V DC
Fast Propagation Times (25-ns Typical)
Drives 1000-pF Load With 8-ns Rise and Fall
Times
Excellent Propagation Delay Matching (3-ns
Typical)
Supply Rail Undervoltage Lockout
Low Power Consumption
Pin Compatible With HIP2100/HIP2101

Drives Both a High-Side and Low-Side N-Channel
MOSFETs
Independent High- and Low-Driver Logic Inputs
Bootstrap Supply Voltage up to 118 V DC
Fast Propagation Times (25-ns Typical)
Drives 1000-pF Load With 8-ns Rise and Fall
Times
Excellent Propagation Delay Matching (3-ns
Typical)
Supply Rail Undervoltage Lockout
Low Power Consumption
Pin Compatible With HIP2100/HIP2101

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

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Technische Dokumentation

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Top-Dokumentation	Typ	Titel	Format-Optionen	Datum
*	Datenblatt	LM5100A/B/C, LM5101A/B/C 3-A, 2-A, and 1-A High-Voltage, High-Side and Low-Side Gate Drivers datasheet (Rev. Q)	PDF \| HTML	03.12.2015
	Anwendungshinweis	Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET	PDF \| HTML	25.03.2024
	Anwendungshinweis	Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters	PDF \| HTML	24.01.2024
	Anwendungshinweis	Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A)	PDF \| HTML	08.09.2023
	Anwendungshinweis	Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A)	PDF \| HTML	17.02.2022
	Anwendungshinweis	Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D)		07.04.2021
	Anwendungshinweis	Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery.		12.05.2020
	Application brief	External Gate Resistor Selection Guide (Rev. A)		28.02.2020
	Application brief	Understanding Peak IOH and IOL Currents (Rev. A)		28.02.2020
	Application brief	Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives		22.10.2019
	Anwendungshinweis	Maximizing DC/DC converter designs with UCC27282		18.01.2019
	Anwendungshinweis	UCC27282 Improving motor drive system robustness		11.01.2019
	Weitere Dokumente	Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A)		29.10.2018
	Auswahlhilfe	Power Management Guide 2018 (Rev. R)		25.06.2018
	Anwendungshinweis	AN-1317 Selection of External Bootstrap Diode for LM510X Devices (Rev. B)		04.05.2018

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

UCC27288EVM — Evaluierungsmodul für Halbbrücken-Gate-Treiber UCC27288, 100 V, 3 A, mit 8-V-UVLO.

Das UCC27288EVM ist für die Evaluierung des UCC27288D ausgelegt, einem 100-V-Halbbrücken-Gate-Treiber mit 2,5-A-Quell- und 3,5-A-Senk-Spitzenstrombelastbarkeit. Dieses EVM dient als Referenzdesign zur Ansteuerung von Leistungs-MOSFETs mit bis zu 20 V Antriebsspannung.

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