Gehäuseinformationen
| Gehäuse | Pins SOP (NS) | 20 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 2.000 | LARGE T&R |
Merkmale von SN74ABT640
- State-of-the-Art EPIC-IIBTM BiCMOS Design Significantly Reduces Power Dissipation
- ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
- Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
- Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
- High-Drive Outputs (-32-mA IOH, 64-mA IOL)
- Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), and Plastic (N) and Ceramic (J) DIPs
EPIC-IIB is a trademark of Texas Instruments Incorporated.
Beschreibung von SN74ABT640
The 'ABT640 bus transceivers are designed for asynchronous
communication between data buses. These devices transmit inverted
data from the A bus to the B bus or from the B bus to the A bus,
depending on the level at the direction-control (DIR) input. The
output-enable (
) input can be
used to disable the device so that the buses are effectively
isolated.
To ensure the high-impedance state during power up or power down,
should be tied
to VCC through a pullup resistor; the minimum value of the
resistor is determined by the current-sinking capability of the
driver.
The SN54ABT640 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT640 is characterized for operation from -40°C to 85°C.