Gehäuseinformationen
| Gehäuse | Pins VQFN (RGY) | 14 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von SN74CB3Q3125
- High-Bandwidth Data Path (up to 500 MHz(1))
- 5-V Tolerant I/Os With Device Powered Up
or Powered Down - Low and Flat ON-State Resistance (ron)
Characteristics Over Operating Range
(ron = 3 Ω Typ) - Rail-to-Rail Switching on Data I/O Ports
- 0-V to 5-V Switching With 3.3-V VCC
- 0-V to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow With Near-Zero
Propagation Delay - Low Input and Output Capacitance Minimizes
Loading and Signal Distortion
(Cio(OFF) = 4 pF Typ) - Fast Switching Frequency (fOE = 20 MHz Max)
- Data and Control Inputs Provide Undershoot
Clamp Diodes - Low Power Consumption
(ICC = 0.3 mA Typ) - VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0-V to 5-V Signaling Levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) - Control Inputs Can Be Driven by TTL,
5-V, or 3.3-V CMOS Outputs - Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II - ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model
(A114-B, Class II) - 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model
- Supports Both Digital and Analog Applications:
USB Interface, Differential Signal Interface, Bus
Isolation, Low-Distortion Signal Gating
Beschreibung von SN74CB3Q3125
The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.