Gehäuseinformationen
| Gehäuse | Pins SOT-9X3 (DRT) | 3 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von TPD2EUSB30
- Supports USB 3.0 data rates (5 Gbps)
- IEC 61000-4-2 ESD protection (level 4 contact)
- IEC 61000-4-5 surge protection
- 5 A (8/20 µs)
- Low capacitance
- DRT: 0.7 pF (typical)
- DQA: 0.8 pF (typical)
- Dynamic resistance: 0.6 Ω (typical)
- Space-saving DRT, DQA packages
- Flow-through pin mapping
Beschreibung von TPD2EUSB30
The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.
The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.
The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.