Gehäuseinformationen
| Gehäuse | Pins WSON (DSG) | 8 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von TRF37B75
- 40 MHz– 4000 MHz
- Gain: 15 dB
- Noise Figure: 3.8 dB
- Output P1dB: 17.5 dBm at 2000 MHz
- Output IP3: 32.5 dBm at 2000 MHz
- Power Down Mode
- Single Supply: 5 V
- Stabilized Performance over Temperature
- Unconditionally Stable
- Robust ESD: >1 kV HBM; >1 kV CDM
Beschreibung von TRF37B75
The TRF37B75 is packaged in a 2.00mm × 2.00mm WSON with a power down pin feature, making it ideal for applications where space and low power modes are critical.
The TRF37B75 is designed for ease of use. For maximum flexibility, this family of parts uses a common 5 V supply and consumes 85 mA. In addition, this family was designed with an active bias circuit that provides a stable and predictable bias current over process, temperature and voltage variations. For gain and linearity budgets the device was designed to provide a flat gain response and excellent OIP3 out to 4000 MHz. For space constrained applications this family is internally matched to 50 Ω, which simplifies ease of use and minimizes needed PCB area.
For all available packages, see the orderable addendum at the end of the datasheet.