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UCC21551

AKTIV

Reinforced, 4A/6A dual-channel isolated gate driver w/ enable, programable dead time

Produktdetails

Number of channels 2 Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS Operating temperature range (°C) -40 to 150 Rating Catalog Rise time (ns) 8 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12, 17 TI functional safety category Functional Safety-Capable
Number of channels 2 Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS Operating temperature range (°C) -40 to 150 Rating Catalog Rise time (ns) 8 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12, 17 TI functional safety category Functional Safety-Capable
SOIC (DWK) 14 106.09 mm² (10.3 mm × 10.3 mm) SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V, 12V and 17V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V, 12V and 17V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast enable for power sequencing

The UCC21551x is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.

The UCC21551x can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21551x device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21551x is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.

The UCC21551x can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21551x device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt UCC21551x 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver datasheet (Rev. D) PDF | HTML 26.06.2024
Zertifikat VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 15.07.2026
Zertifikat FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance. 19.05.2025
Zertifikat CQC Certificate for UCC21551xx 27.08.2024
Anwendungshinweis Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22.01.2024
Zertifikat UCC21551CQEVM-079 EU RoHS Declaration of Conformity (DoC) 06.04.2023

Design und Entwicklung

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Evaluierungsplatine

UCC21551CQEVM-079 — UCC21551 Evaluierungsmodul für zweikanaligen isolierten Gate-Treiber mit 4 A und 6 A.

Das UCC21551CQEVM ist eine Platine mit doppelter Kupferschicht und mehreren Testpunkten und Jumper, die genutzt werden können, um die Funktionalität des UCC21551 vollständig zu evaluieren. Das EVM bietet PWM-Eingangssteuerung, auf der Platine einstellbare Stromversorgung, Buchsen für diskrete FETs, (...)

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