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UCC27288

AKTIV

Halbbrücken-Gate-Treiber, 120 V, 3 A, mit 8 V UVLO und ohne interne Bootstrap-Diode

Produktdetails

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 16 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.016 Rise time (ns) 12 Fall time (ns) 10 Iq (mA) 0.002, 2000 Input threshold TTL Channel input logic TTL Switch node voltage (V) -14 Features External bootstrap diode Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 16 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.016 Rise time (ns) 12 Fall time (ns) 10 Iq (mA) 0.002, 2000 Input threshold TTL Channel input logic TTL Switch node voltage (V) -14 Features External bootstrap diode Driver configuration Dual inputs
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives two N-channel MOSFETs in high-side low-side configuration
  • 16-ns typical propagation delay
  • 12-ns rise, 10-ns typical fall time with 1800-pF load
  • 1-ns typical delay matching
  • Configurable external bootstrap diode
  • 8-V typical undervoltage lockout
  • Absolute maximum negative voltage handling on inputs (–5 V)
  • Absolute maximum negative voltage handling on HS (–14 V)
  • ±3-A peak output current
  • Absolute maximum boot voltage 120 V
  • Inputs are independent of each other and VDD
  • Under voltage lockout for both channels
  • Specified from –40°C to 140°C junction temperature
  • Drives two N-channel MOSFETs in high-side low-side configuration
  • 16-ns typical propagation delay
  • 12-ns rise, 10-ns typical fall time with 1800-pF load
  • 1-ns typical delay matching
  • Configurable external bootstrap diode
  • 8-V typical undervoltage lockout
  • Absolute maximum negative voltage handling on inputs (–5 V)
  • Absolute maximum negative voltage handling on HS (–14 V)
  • ±3-A peak output current
  • Absolute maximum boot voltage 120 V
  • Inputs are independent of each other and VDD
  • Under voltage lockout for both channels
  • Specified from –40°C to 140°C junction temperature

The UCC27288 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27288 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27288 can be used in conjunction with both analog and digital controllers. Two inputs are completely independent of each other and therefore provides added control design flexibility.

The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. The inputs are completely independent of each other. This allows for control flexibility where two outputs can be overlapped by overlapping inputs if needed. Small propagation delay and delay matching specifications minimize the dead-time requirement which improves system efficiency.

Under voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. No integrated bootstrap diode allows user to use application-appropriate external bootstrap diode. UCC27288 is offered in an SOIC8 package to improve system robustness in harsh environments.

The UCC27288 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27288 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27288 can be used in conjunction with both analog and digital controllers. Two inputs are completely independent of each other and therefore provides added control design flexibility.

The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. The inputs are completely independent of each other. This allows for control flexibility where two outputs can be overlapped by overlapping inputs if needed. Small propagation delay and delay matching specifications minimize the dead-time requirement which improves system efficiency.

Under voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. No integrated bootstrap diode allows user to use application-appropriate external bootstrap diode. UCC27288 is offered in an SOIC8 package to improve system robustness in harsh environments.

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UCC27211 AKTIV Halbbrücken-Gate-Treiber, 4 A, 120 V, mit 8 V UVLO und TTL-Eingängen Similar pin-to-pin device with an integrated bootstrap diode, higher current and similar electrical characteristics

Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt UCC27288 3-A 120-V Half-Bridge Driver with 8-V UVLO and External Bootstrap Diode datasheet (Rev. B) PDF | HTML 22.04.2022
Anwendungshinweis Mapping Application Requirements with the 120V Halfbridge Gate Driver (Rev. A) PDF | HTML 27.02.2026
Anwendungshinweis Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25.03.2024
Anwendungshinweis Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24.01.2024
Anwendungshinweis Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08.09.2023
Anwendungshinweis Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17.02.2022
Anwendungshinweis Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 07.04.2021
Anwendungshinweis Understanding and comparing peak current capability of gate drivers PDF | HTML 30.03.2021
Zertifikat UCC27288EVM EU Declaration of Conformity (DoC) 13.05.2020
Anwendungshinweis Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12.05.2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22.10.2019
Anwendungshinweis Maximizing DC/DC converter designs with UCC27282 18.01.2019
Anwendungshinweis UCC27282 Improving motor drive system robustness 11.01.2019

Design und Entwicklung

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Evaluierungsplatine

UCC27288EVM — Evaluierungsmodul für Halbbrücken-Gate-Treiber UCC27288, 100 V, 3 A, mit 8-V-UVLO.

Das UCC27288EVM ist für die Evaluierung des UCC27288D ausgelegt, einem 100-V-Halbbrücken-Gate-Treiber mit 2,5-A-Quell- und 3,5-A-Senk-Spitzenstrombelastbarkeit. Dieses EVM dient als Referenzdesign zur Ansteuerung von Leistungs-MOSFETs mit bis zu 20 V Antriebsspannung.
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