All other trademarks are the property of their respective owners
The BUF08630 offers eight programmable gamma channels and one programmable VCOM channel.
The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory.
The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz.
The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C.
| Tipo | Título | Fecha | ||
|---|---|---|---|---|
| * | Data sheet | Programmable Gamma-Voltage Generator w/Adjustable Gain Vcom & 1/2 AVDD Topology datasheet (Rev. A) | 13 ago 2012 | |
| Application note | Driving Capacitive Loads with Gamma Buffers | 20 nov 2012 |
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
| Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
|---|---|---|
| VQFN (RGW) | 20 | Ultra Librarian |
El contenido lo proporcionan “tal como está” TI y los colaboradores de la comunidad y no constituye especificaciones de TI. Consulte los términos de uso.
Si tiene preguntas sobre la calidad, el paquete o el pedido de productos de TI, consulte el soporte de TI.