Información de empaque
| Encapsulado | Pines PICOSTAR (YJN) | 3 |
| Rango de temperatura de funcionamiento (℃) -55 to 150 |
| Cant. de paquetes | Empresa de transporte 250 | SMALL T&R |
Características para CSD25501F3
- Low on-resistance
- Ultra-low Qg and Qgd
- Ultra-small footprint
- 0.7mm × 0.6mm
- Low profile
- 0.22mm max height
- Integrated ESD protection diode
- Lead and halogen free
- RoHS compliant
Descripción de CSD25501F3
This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V.