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LM5104

ACTIVO

Controlador de puerta de medio puente de 2 A y 100 V con UVLO de 8 V y demora adaptativa

Detalles del producto

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
WSON (DPR) 10 16 mm² (4 mm × 4 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges With Programmable
    Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Fast Turnoff Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads With 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • SOIC and WSON-10 4-mm × 4-mm Package
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges With Programmable
    Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Fast Turnoff Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads With 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • SOIC and WSON-10 4-mm × 4-mm Package

The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos LM5104 High-Voltage Half-Bridge Gate Driver With Adaptive Delay datasheet (Rev. D) PDF | HTML 16/12/2014
Nota sobre la aplicación Benefits and Use of Single Input Gate Drivers with Programmable Dead Time PDF | HTML 23/04/2025
Nota sobre la aplicación Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25/03/2024
Nota sobre la aplicación Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24/01/2024
Nota sobre la aplicación Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 8/09/2023
Nota sobre la aplicación Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17/02/2022
Nota sobre la aplicación Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 7/04/2021
Nota sobre la aplicación Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12/05/2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28/02/2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28/02/2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22/10/2019
Nota sobre la aplicación Maximizing DC/DC converter designs with UCC27282 18/01/2019
Nota sobre la aplicación UCC27282 Improving motor drive system robustness 11/01/2019
Más documentación Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29/10/2018

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Modelo de simulación

LM5104 PSpice Transient Model (Rev. A)

SNVM164A.ZIP (49 KB) - Modelo PSpice
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LM5104 TINA-TI Transient Reference Design

SNVM339.TSC (536 KB) - Diseño de referencia TINA-TI
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Modelo de simulación

LM5104 TINA-TI Transient Spice Model

SNVM340.ZIP (10 KB) - Modelo TINA-TI Spice
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Modelo de simulación

LM5104 Unencrypted PSpice Transient Model

SNVMAC6.ZIP (2 KB) - Modelo PSpice
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Herramienta de cálculo

SNVR521 — LM51xx Schematic Review Template

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