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Radiofrecuencia y microondas
Amplificadores de RF
Amplificadores totalmente diferenciales (FDA) de RF

LMH5401

ACTIVO

Amplificador completamente diferencial de 8 GHz y banda ultra ancha

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LMH5401

ACTIVO
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Detalles del producto

Type RF FDA Frequency (min) (MHz) 0 Frequency (max) (MHz) 4000 Gain (typ) (dB) 8 Noise figure (typ) (dB) 11 OIP3 (typ) (dBm) 37.5 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 1 3rd harmonic (dBc) -70 OIP2 (typ) (dBm) 80 2nd harmonic (dBc) -53 Supply voltage (V) 5 Current consumption (mA) 55 Number of channels 1 Operating temperature range (°C) -40 to 85 Rating Catalog Output enable Yes
Type RF FDA Frequency (min) (MHz) 0 Frequency (max) (MHz) 4000 Gain (typ) (dB) 8 Noise figure (typ) (dB) 11 OIP3 (typ) (dBm) 37.5 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 1 3rd harmonic (dBc) -70 OIP2 (typ) (dBm) 80 2nd harmonic (dBc) -53 Supply voltage (V) 5 Current consumption (mA) 55 Number of channels 1 Operating temperature range (°C) -40 to 85 Rating Catalog Output enable Yes
UQFN (RMS) 14 6.25 mm² 2.5 x 2.5
  • Gain Bandwidth Product (GBP): 8 GHz
  • Excellent Linearity Performance:
    DC to 2 GHz, G = 12 dB
  • Slew Rate: 17,500 V/µs
  • Low HD2, HD3 Distortion
    (1 VPP, 200 Ω, DE-DE, G = 12 dB):
    • 100 MHz: HD2 at –104 dBc, HD3 at –96 dBc
    • 200 MHz: HD2 at –95 dBc, HD3 at –92 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –77 dBc
    • 1 GHz: HD2 at –64 dBc, HD3 at –58 dBc
  • Low IMD2, IMD3 Distortion
    (2 VPP, 200 Ω, DE-DE, G = 12 dB):
    • 200 MHz: IMD2 at –96 dBc, IMD3 at –95 dBc
    • 500 MHz: IMD2 at –80 dBc, IMD3 at –83 dBc
    • 1 GHz: IMD2 at –70 dBc, IMD3 at –63 dBc
  • Input Voltage Noise: 1.25 nV/√Hz
  • Input Current Noise: 3.5 pA/√Hz
  • Supports Single- and Dual-Supply Operation
  • Power Consumption: 55 mA
  • Power-Down Feature
  • Gain Bandwidth Product (GBP): 8 GHz
  • Excellent Linearity Performance:
    DC to 2 GHz, G = 12 dB
  • Slew Rate: 17,500 V/µs
  • Low HD2, HD3 Distortion
    (1 VPP, 200 Ω, DE-DE, G = 12 dB):
    • 100 MHz: HD2 at –104 dBc, HD3 at –96 dBc
    • 200 MHz: HD2 at –95 dBc, HD3 at –92 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –77 dBc
    • 1 GHz: HD2 at –64 dBc, HD3 at –58 dBc
  • Low IMD2, IMD3 Distortion
    (2 VPP, 200 Ω, DE-DE, G = 12 dB):
    • 200 MHz: IMD2 at –96 dBc, IMD3 at –95 dBc
    • 500 MHz: IMD2 at –80 dBc, IMD3 at –83 dBc
    • 1 GHz: IMD2 at –70 dBc, IMD3 at –63 dBc
  • Input Voltage Noise: 1.25 nV/√Hz
  • Input Current Noise: 3.5 pA/√Hz
  • Supports Single- and Dual-Supply Operation
  • Power Consumption: 55 mA
  • Power-Down Feature

The LMH5401 device is a very high-performance, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401 generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.

The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from DC to 2 GHz. The LMH5401 can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin aligns the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 275 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, UQFN-14 package for higher performance.

The LMH5401 device is a very high-performance, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401 generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.

The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from DC to 2 GHz. The LMH5401 can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin aligns the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 275 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, UQFN-14 package for higher performance.
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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Fecha
* Data sheet LMH5401 8-GHz, Low-Noise, Low-Power, Fully-Differential Amplifier datasheet (Rev. D) PDF | HTML 23 feb 2018
E-book The Signal e-book: A compendium of blog posts on op amp design topics 28 mar 2017
Application note ADC32RF45: Amplifier to ADC Interface (Rev. A) 07 sep 2016
Technical article How to use a fully differential amplifier as a level shifter PDF | HTML 13 jul 2016
Technical article Disentangling RF amplifier specs: amplifier spot noise vs. noise figure PDF | HTML 05 feb 2016
Technical article How to optimize differential amplifier noise PDF | HTML 07 jul 2015

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

LMH5401EVM — Módulo de evaluación LMH5401

The LMH5401EVM is an evaluation module for the single LMH5401 amplifier in a 14-lead high performance RF package. This evaluation module is designed to quickly and easily demonstrate the functionality and versatility of the amplifier. The EVM is ready to connect to power, signal source, and test (...)

Guía del usuario: PDF
No disponible en TI.com
Placa de evaluación

XMICR-3P-LMH5401 — Módulos de evaluación LMH5401 de X-MWblock

X-MWblocks consist of RF and Microwave “drop-in” components that can be used individually for prototyping or in production assemblies. X-MWblocks are easy to test, integrate, align and configure to 60 GHz and beyond. No messy Sweat Soldering or Silver Epoxy processes are required. (...)

Desde: X-Microwave
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Modelo de simulación

LMH5401 ADS Model

SBOJ019.ZIP (87 KB) - Spice Model
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Modelo de simulación

LMH5401 PSpice Model

SBOMBP6.ZIP (133 KB) - PSpice Model
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Modelo de simulación

LMH5401 TINA Macromodel (Rev. B)

SBOM920B.ZIP (10 KB) - TINA-TI Spice Model
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Modelo de simulación

LMH5401 TINA Reference Design (Rev. B)

SBOM919B.TSC (365 KB) - TINA-TI Reference Design
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Herramienta de cálculo

SBOR022 — TI FDA Calculator

Productos y hardware compatibles

Productos y hardware compatibles
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Muchos diseños de referencia de TI incluyen LMH5401

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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
UQFN (RMS) 14 Ultra Librarian
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL)/reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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