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Compuertas NAND

SN74LVC1G00-EP

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Puerta NAND simple de 1 entradas, de 1.65 V a 5.5 V de producto mejorado

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Hoja de datos

SN74LVC1G00-EP

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Detalles del producto

Technology family LVC Number of channels 1 Inputs per channel 1 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Standard CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
Technology family LVC Number of channels 1 Inputs per channel 1 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Standard CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
SOT-SC70 (DCK) 5 4.2 mm² (2 mm × 2.1 mm) SOT-23 (DBV) 5 8.12 mm² (2.9 mm × 2.8 mm)
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 3.8 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 3.8 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC1G00 performs the Boolean function Y = A • B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC1G00 performs the Boolean function Y = A • B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos SN74LVC1G00-EP datasheet (Rev. D) 19/09/2006
* Informe de radiación y confiabilidad SN74LVC1G00MDCKREP Reliability Report 26/10/2011
* VID SN74LVC1G00-EP VID V6204732 21/06/2016

Diseño y desarrollo

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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOT-SC70 (DCK) 5 Ultra Librarian
SOT-23 (DBV) 5 Ultra Librarian
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