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Radiofrecuencia y microondas
Amplificadores de RF
Amplificadores totalmente diferenciales (FDA) de RF

TRF0206-SP

ACTIVO

Amplif. de RF totalmente dif., resistencia garantizada a la radiación (RHA), casi CC a >6.5 GHz

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TRF0206-SP

ACTIVO
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Detalles del producto

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 6500 Gain (typ) (dB) 16 Noise figure (typ) (dB) 8 OIP3 (typ) (dBm) 38 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 2 3rd harmonic (dBc) -68 OIP2 (typ) (dBm) 58 2nd harmonic (dBc) -60 Supply voltage (V) 3.3 Current consumption (mA) 130 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 6500 Gain (typ) (dB) 16 Noise figure (typ) (dB) 8 OIP3 (typ) (dBm) 38 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 2 3rd harmonic (dBc) -68 OIP2 (typ) (dBm) 58 2nd harmonic (dBc) -60 Supply voltage (V) 3.3 Current consumption (mA) 130 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
LCCC-FC (FFM) 12 37.82 mm² 6.2 x 6.1
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R2122001VXC
    • Radiation hardness assurance (RHA) up to 100-krad (Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to LET = 75 MeV-cm 2/mg
  • Qualified over the military temperature range of –55°C to +125°C
  • Excellent single-ended to differential conversion performance as ADC driver
  • Operates in differential-to-single-ended mode to work as a DAC buffer
  • 3-dB bandwidth: 6.5 GHz
  • 1-dB gain flatness: 4.8 GHz
  • Fixed single-ended-to-differential power gain of 12.5 dB
  • OIP3 performance:
    • 38 dBm at 2 GHz
    • 32 dBm at 6 GHz
  • P1dB performance:
    • 12 dBm at 2 GHz
    • 10 dBm at 6 GHz
  • Noise figure:
    • 8 dB at 2 GHz
    • 9 dB at 6 GHz
  • Gain and phase imbalance: ±0.4 dB and ±3º
  • Power-down feature
  • Single-supply operation: 3.3 V
  • Active current: 130 mA
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R2122001VXC
    • Radiation hardness assurance (RHA) up to 100-krad (Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to LET = 75 MeV-cm 2/mg
  • Qualified over the military temperature range of –55°C to +125°C
  • Excellent single-ended to differential conversion performance as ADC driver
  • Operates in differential-to-single-ended mode to work as a DAC buffer
  • 3-dB bandwidth: 6.5 GHz
  • 1-dB gain flatness: 4.8 GHz
  • Fixed single-ended-to-differential power gain of 12.5 dB
  • OIP3 performance:
    • 38 dBm at 2 GHz
    • 32 dBm at 6 GHz
  • P1dB performance:
    • 12 dBm at 2 GHz
    • 10 dBm at 6 GHz
  • Noise figure:
    • 8 dB at 2 GHz
    • 9 dB at 6 GHz
  • Gain and phase imbalance: ±0.4 dB and ±3º
  • Power-down feature
  • Single-supply operation: 3.3 V
  • Active current: 130 mA

The TRF0206-SP is a very high-performance, radiation-hardened radio-frequency (RF) amplifier optimized for RF applications. This device is an excellent choice for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high performance ADC12DJ3200QML-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process, and is available in a space-qualified, LCCC package.

The device operates on a 3.3‑V single-rail supply. A power-down feature is available for power savings.

The TRF0206-SP is a very high-performance, radiation-hardened radio-frequency (RF) amplifier optimized for RF applications. This device is an excellent choice for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high performance ADC12DJ3200QML-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process, and is available in a space-qualified, LCCC package.

The device operates on a 3.3‑V single-rail supply. A power-down feature is available for power savings.
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Documentación técnica

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* Data sheet TRF0206-SP Single‑Channel, 10‑MHz to 6.5‑GHz, 3‑dB BW, ADC Driver Amplifier datasheet (Rev. B) PDF | HTML 20 ago 2023
* Radiation & reliability report Single-Event Effects Test Report of the TRF0206-SP 8-GHz Differential Amplifier (Rev. A) PDF | HTML 07 ago 2024
* Radiation & reliability report TRF0206-SP Total Ionizing Dose (TID) Report PDF | HTML 01 jun 2023
* Radiation & reliability report TRF0206-SP (5962R2122001VXC) Neutron Displacement Damage Characterization PDF | HTML 22 dic 2022
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 17 jun 2025
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 10 jun 2025
Selection guide TI Space Products (Rev. K) 04 abr 2025
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. B) 20 feb 2025
Certificate TRF0206EVM-CVAL EU RoHS Declaration of Conformity (DoC) (Rev. A) 12 dic 2022
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 19 oct 2022
Application note Rad-hardened FDA as Clock Buffer in Communication and Radar Payloads (Rev. A) 02 ago 2019
E-book Radiation Handbook for Electronics (Rev. A) 21 may 2019

Diseño y desarrollo

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Placa de evaluación

TRF0206EVM — Módulo de evaluación TRF0206-SP con amplificador de 10 MHz a 6.5 GHz, ancho de banda de 3 dB, de ext

El módulo de evaluación TRF0206EVM (EVM) se utiliza para evaluar el dispositivo TRF0206-SP, un amplificador resistente a la radiación con entrada de un único extremo y salida diferencial, disponible en un encapsulado LCC-FC de 12 pines de 6.00 mm2 × 6.10 mm2. El dispositivo está diseñado para (...)

Guía del usuario: PDF | HTML
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Modelo de simulación

TRF0206-SP S2D S-Parameters

SBOMCN2.ZIP (5 KB) - S-Parameter Model
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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
LCCC-FC (FFM) 12 Ultra Librarian
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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