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Controladores de compuertas aislados

UCC21737-Q1

ACTIVO

Contr. de puerta monocanal aislada automotriz, 10 A c/ protec. contra cortocirc. activos p/ SiC/IGBT

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UCC21737-Q1

ACTIVO
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Detalles del producto

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active Short Circuit (ASC) protection, Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Over Current Protection, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active Short Circuit (ASC) protection, Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Over Current Protection, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active Miller clamp
  • 900mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40ns noise transient and pulse on input pins
  • 12V VDD UVLO and –3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active Miller clamp
  • 900mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40ns noise transient and pulse on input pins
  • 12V VDD UVLO and –3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI).

The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI).

The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
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* Data sheet UCC21737-Q1 Automotive 10A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI datasheet (Rev. C) PDF | HTML 17 jun 2024
Application brief Does My Design Need a Miller Clamp? PDF | HTML 11 dic 2024
Application note Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 19 jul 2024
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 07 jun 2023

Diseño y desarrollo

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Placa de evaluación

UCC21732QDWEVM-025 — Placa de evaluación de conducción y protección para transistores y módulos de potencia SiC e IGBT

El UCC21732QDWEVM-025 es una placa de controlador de puerta aislada de un canal compacta que proporciona accionamiento, tensiones de polarización, protección y diagnóstico necesarios para los módulos de potencia MOSFET y Si IGBT de SiC en encapsulados de 150 x 62 x 17 mm y 106 x 62 x 30 mm. Este (...)

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