LM5100A

활성

8V UVLO 및 CMOS 입력을 지원하는 3A, 100V 하프 브리지 게이트 드라이버

지금 주문하기

데이터 시트

document-pdfAcrobat LM5100A/B/C, LM5101A/B/C 3-A, 2-A, and 1-A High-Voltage, High-Side and Low-Side Gate Drivers datasheet (Rev. Q) (영어) PDF | HTML

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UCC27200A

활성

8V UVLO, 음전압 내성 및 CMOS 입력을 지원하는 120V 3A 하프 브리지 게이트 드라이버 Newer version with improved specs.

LM5100A

활성

데이터 시트

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제품 상세 정보

Bootstrap supply voltage (max) (V)

100

Power switch

MOSFET

Input supply voltage (min) (V)

9

Input supply voltage (max) (V)

14

Peak output current (A)

3

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

8

Rating

Catalog

Propagation delay time (µs)

0.025

Rise time (ns)

10

Fall time (ns)

10

Iq (mA)

0.01

Input threshold

CMOS

Channel input logic

CMOS

Switch node voltage (V)

-1

Driver configuration

Dual, Independent

Bootstrap supply voltage (max) (V)

100

Power switch

MOSFET

Input supply voltage (min) (V)

9

Input supply voltage (max) (V)

14

Peak output current (A)

3

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

8

Rating

Catalog

Propagation delay time (µs)

0.025

Rise time (ns)

10

Fall time (ns)

10

Iq (mA)

0.01

Input threshold

CMOS

Channel input logic

CMOS

Switch node voltage (V)

-1

Driver configuration

Dual, Independent

HSOIC (DDA)

8

29.4 mm² (4.9 mm × 6 mm)

SOIC (D)

8

29.4 mm² (4.9 mm × 6 mm)

WSON (DPR)

10

16 mm² (4 mm × 4 mm)

Drives Both a High-Side and Low-Side N-Channel
MOSFETs
Independent High- and Low-Driver Logic Inputs
Bootstrap Supply Voltage up to 118 V DC
Fast Propagation Times (25-ns Typical)
Drives 1000-pF Load With 8-ns Rise and Fall
Times
Excellent Propagation Delay Matching (3-ns
Typical)
Supply Rail Undervoltage Lockout
Low Power Consumption
Pin Compatible With HIP2100/HIP2101

Drives Both a High-Side and Low-Side N-Channel
MOSFETs
Independent High- and Low-Driver Logic Inputs
Bootstrap Supply Voltage up to 118 V DC
Fast Propagation Times (25-ns Typical)
Drives 1000-pF Load With 8-ns Rise and Fall
Times
Excellent Propagation Delay Matching (3-ns
Typical)
Supply Rail Undervoltage Lockout
Low Power Consumption
Pin Compatible With HIP2100/HIP2101

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

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UCC27289

활성

8V UVLO 및 활성화 옵션을 지원하는 120V 3A 하프 브리지 게이트 드라이버 Improved negative voltage handling and tighter propagation delay, TTL compatible inputs

기술 자료

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15개 모두 보기

상위 문서	유형	직함	형식 옵션	날짜
*	데이터 시트	LM5100A/B/C, LM5101A/B/C 3-A, 2-A, and 1-A High-Voltage, High-Side and Low-Side Gate Drivers datasheet (Rev. Q)	PDF \| HTML	2015. 12. 3
	애플리케이션 노트	Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET	PDF \| HTML	2024. 3. 25
	애플리케이션 노트	Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters	PDF \| HTML	2024. 1. 24
	애플리케이션 노트	Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A)	PDF \| HTML	2023. 9. 8
	애플리케이션 노트	Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A)	PDF \| HTML	2022. 2. 17
	애플리케이션 노트	Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D)		2021. 4. 7
	애플리케이션 노트	Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery.		2020. 5. 12
	Application brief	External Gate Resistor Selection Guide (Rev. A)		2020. 2. 28
	Application brief	Understanding Peak IOH and IOL Currents (Rev. A)		2020. 2. 28
	Application brief	Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives		2019. 10. 22
	애플리케이션 노트	Maximizing DC/DC converter designs with UCC27282		2019. 1. 18
	애플리케이션 노트	UCC27282 Improving motor drive system robustness		2019. 1. 11
	추가 자료	Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A)		2018. 10. 29
	선택 가이드	Power Management Guide 2018 (Rev. R)		2018. 6. 25
	애플리케이션 노트	AN-1317 Selection of External Bootstrap Diode for LM510X Devices (Rev. B)		2018. 5. 4

설계 및 개발

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평가 보드

UCC27288EVM — UCC27288 100V, 3A, 8V UVLO 하프 브리지 게이트 드라이버 평가 모듈

UCC27288EVM은 2.5A 피크 소스 전류 및 3.5A 피크 싱크 전류 기능을 지원하는 100V 하프 브리지 게이트 드라이버인 UCC27288D를 평가하기 위해 설계되었습니다. 이 EVM은 최대 20V 드라이브 전압으로 전력 MOSFET을 구동하기 위한 레퍼런스 설계로 사용됩니다.

사용 설명서: PDF

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