제품 상세 정보

Current consumption (mA) 60 Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 9.6 OIP3 (typ) (dBm) 47.7 P1dB (typ) (dBm) 12 Number of channels 1 Operating temperature range (°C) -55 to 125 Type Active Balun, RF FDA Rating Space
Current consumption (mA) 60 Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 9.6 OIP3 (typ) (dBm) 47.7 P1dB (typ) (dBm) 12 Number of channels 1 Operating temperature range (°C) -55 to 125 Type Active Balun, RF FDA Rating Space
LCCC-FC (FFK) 14 33 mm² 6 x 5.5
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

다운로드 스크립트와 함께 비디오 보기 동영상

관심 가지실만한 유사 제품

open-in-new 대안 비교
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능
TRF0206-SP 활성 방사능 손상 방지 보증(RHA), 10MHz~6.5GHz, 3dB BW 단일 종단-차동 증폭기 Wider bandwidth, higher AC performance, AC-coupled upgrade

기술 문서

star =TI에서 선정한 이 제품의 인기 문서
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모두 보기14
유형 직함 날짜
* Data sheet LMH5401-SP radiation hardened 6.5-GHz, low-noise, low-power, gain-configurable fully differential amplifier datasheet (Rev. B) PDF | HTML 2019/02/28
* Radiation & reliability report Single-Event Effects Test Report of the LMH5401-SP (Rev. B) 2018/11/26
* Radiation & reliability report LMH5401-SP (5962R1721401VXC) Neutron Displacement Damage Characterization 2018/09/07
* Radiation & reliability report LMH5401-SP TID Radiation Report (Rev. A) 2018/07/31
* SMD LMH5401-SP SMD 5962-17214 2018/05/03
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. A) 2023/08/31
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. A) PDF | HTML 2022/11/17
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022/10/19
Application brief Analog Front-End Design With Texas Instruments’ Tooling Landscape PDF | HTML 2022/03/07
Selection guide TI Space Products (Rev. I) 2022/03/03
Application note Rad-hardened FDA as Clock Buffer in Communication and Radar Payloads (Rev. A) 2019/08/02
E-book Radiation Handbook for Electronics (Rev. A) 2019/05/21
User guide TSW12D1620EVM-CVAL User's Guide (Rev. A) 2019/01/29
EVM User's guide LMH5401EVM-CVAL Evaluation Module (EVM) (Rev. A) 2018/09/21

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

LMH5401EVM-CVAL — LMH5401-SP 방사능 손상 방지 보증(RHA) 광대역 완전 차동 증폭기 평가 모듈

The LMH5401EVM-CVAL is an evaluation module for the single LMH5401FFK/EM amplifier in a 14 pin LCCC high performance RF package. This evaluation module is designed to quickly and easily demonstrate the functionality and versatility of the amplifier.

The EVM is ready to connect to power, signal (...)

사용 설명서: PDF
TI.com에서 구매할 수 없습니다
평가 보드

TSW12D1620EVM-CVAL — ADC12D1620QML-SP 항공우주 등급 광대역 리시버 평가 모듈

TSW12D1620EVM-CVAL은 증폭기, ADC(아날로그-디지털 컨버터), 클로킹, 온도 센서, 마이크로컨트롤러 및 전력 솔루션의 세라믹 엔지니어링 모델을 포함하는 1.5GHz 광대역 수신기 EVM(평가 모듈)입니다. 이 보드는 가까운 DC에서 1.5GHz까지 IF/RF 주파수를 디지털화하는 데 가장 적합합니다.

아날로그 입력 경로에는 6.5GHz LMH5401-SP를 단일 종단-차동 이득 블록으로 활용하거나 증폭기를 우회하고 차동 신호로 ADC를 구동하는 옵션이 있습니다. 증폭기에는 12비트, 듀얼 1.6GSPS 또는 단일 (...)

사용 설명서: PDF
TI.com에서 구매할 수 없습니다
시뮬레이션 모델

LMH5401-SP TINA-TI Reference Design

SBOMAM1.TSC (382 KB) - TINA-TI Reference Design
시뮬레이션 모델

LMH5401-SP TINA-TI Spice Model

SBOMAM0.ZIP (10 KB) - TINA-TI Spice Model
레퍼런스 디자인

TIDA-010191 — 우주 등급 다중 채널 JESD204B 15GHz 레이더용 클로킹 레퍼런스 설계

위상 배열 안테나와 디지털 빔포밍은 미래 우주 레이더 이미징 및 광대역 위성 통신 시스템의 성능을 향상시키는 핵심 기술입니다. 아날로그 빔포밍과 달리 디지털 빔포밍에는 일반적으로 안테나 요소당 데이터 컨버터 세트가 필요합니다. 이러한 컨버터에는 위상 관계가 구체적으로 정의된 클록이 필요합니다. 이 레퍼런스 설계는 정의되고 조정 가능한 위상 관계를 사용하여 저잡음 메가헤르츠~기가헤르츠 클록 신호를 생성하는 방법을 보여줍니다. 단일 이벤트 발생 후 클록 단계 복구도 가능합니다. JESD204B 지원은 10ps 보드 간 스큐로 (...)
Design guide: PDF
패키지 다운로드
LCCC-FC (FFK) 14 옵션 보기

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.

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