홈 로직 및 전압 변환 버퍼, 드라이버 및 트랜시버 비인버팅 버퍼 및 드라이버
홈
로직 및 전압 변환
버퍼, 드라이버 및 트랜시버
비인버팅 버퍼 및 드라이버

SN54ABT541

활성

TTL 호환 CMOS 입력 및 3상 출력을 지원하는 군사용 8채널, 4.5V~5.5V 버퍼

지금 주문
데이터시트

SN54ABT541

활성
데이터시트 지금 주문

제품 상세 정보

Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 48 Supply current (max) (µA) 250 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Military Operating temperature range (°C) -55 to 125
Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 48 Supply current (max) (µA) 250 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Military Operating temperature range (°C) -55 to 125
CDIP (J) 20 167.464 mm² 24.2 x 6.92 CFP (W) 20 90.5828 mm² 13.09 x 6.92 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (N) and Ceramic (J) DIPs

EPIC-IIB is a trademark of Texas Instruments.
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (N) and Ceramic (J) DIPs

EPIC-IIB is a trademark of Texas Instruments.

The SN54ABT541 and SN74ABT541B octal buffers and line drivers are ideal for driving bus lines or buffering memory address registers. The devices feature inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT541 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT541B is characterized for operation from -40°C to 85°C.

The SN54ABT541 and SN74ABT541B octal buffers and line drivers are ideal for driving bus lines or buffering memory address registers. The devices feature inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT541 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT541B is characterized for operation from -40°C to 85°C.
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기술 문서

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모두 보기20
유형 직함 날짜
* Data sheet SN54ABT541, SN74ABT541B datasheet (Rev. L) 2006/12/01
* SMD SN54ABT541 SMD 5962-94718 2016/06/21
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 2021/07/26
Selection guide Logic Guide (Rev. AB) 2017/06/12
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015/12/02
User guide LOGIC Pocket Data Book (Rev. B) 2007/01/16
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004/07/08
Application note Selecting the Right Level Translation Solution (Rev. A) 2004/06/22
Application note Quad Flatpack No-Lead Logic Packages (Rev. D) 2004/02/16
Application note TI IBIS File Creation, Validation, and Distribution Processes 2002/08/29
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 2002/05/10
Selection guide Advanced Bus Interface Logic Selection Guide 2001/01/09
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997/08/01
Application note Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997/06/01
Application note Designing With Logic (Rev. C) 1997/06/01
Application note Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997/03/01
Application note Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 1996/12/01
Application note Input and Output Characteristics of Digital Integrated Circuits 1996/10/01
Application note Live Insertion 1996/10/01
Application note Understanding Advanced Bus-Interface Products Design Guide 1996/05/01

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

패키지 핀 다운로드
CDIP (J) 20 옵션 보기
CFP (W) 20 옵션 보기
LCCC (FK) 20 옵션 보기
TI의 평가 항목에 대한 표준 약관이 적용됩니다.

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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포럼 주제 모두 보기(영문)

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