SN74CB3Q3305

활성

3.3V, 1:1(SPST), 2채널 FET 버스 스위치(액티브 하이)

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데이터 시트

document-pdfAcrobat SN74CB3Q3305 Dual FET Bus Switch 2.5-V or 3.3-V Low-Voltage High-Bandwidth Bus Switch datasheet (Rev. D) (영어) PDF | HTML

SN74CB3Q3305

활성

지금 주문하기

제품 상세 정보

Protocols

Analog, I2C, UART

Configuration

1:1 SPST

Number of channels

2

Bandwidth (MHz)

500

Ron (typ) (mΩ)

3000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

250

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

3.5

CON (typ) (pF)

8

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

Protocols

Analog, I2C, UART

Configuration

1:1 SPST

Number of channels

2

Bandwidth (MHz)

500

Ron (typ) (mΩ)

3000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

250

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

3.5

CON (typ) (pF)

8

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

TSSOP (PW)

8

19.2 mm² (3 mm × 6.4 mm)

VSSOP (DCU)

8

6.2 mm² (2 mm × 3.1 mm)

High-bandwidth data path (up to 500 MHz)⁽¹⁾
5-V tolerant I/Os with device powered up or powered down
Low and flat ON-state resistance (r_on) characteristics over operating range (r_on = 3 Ω typical)
Supports input voltage beyond supply on data I/O ports
- 0 to 5 V switching with 3.3 V V_CC
- 0 to 3.3 V switching with 2.5 V V_CC
Bidirectional data flow with near-zero propagation delay
Low input or output capacitance minimizes loading and signal distortion (C_io(OFF) = 3.5 pF typical)
Fast switching frequency (f_OE = 20 MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (I_CC = 0.25 mA typical)
V_CC operating range from 2.3 V to 3.6 V
Data I/Os support 0 to 5 V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
Control inputs can be driven by TTL or 5 V/3.3 V CMOS outputs
I_off supports partial-power-down mode operation
Latch-up performance exceeds 100 mA per JESD 78, Class II

⁽¹⁾For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.

High-bandwidth data path (up to 500 MHz)⁽¹⁾
5-V tolerant I/Os with device powered up or powered down
Low and flat ON-state resistance (r_on) characteristics over operating range (r_on = 3 Ω typical)
Supports input voltage beyond supply on data I/O ports
- 0 to 5 V switching with 3.3 V V_CC
- 0 to 3.3 V switching with 2.5 V V_CC
Bidirectional data flow with near-zero propagation delay
Low input or output capacitance minimizes loading and signal distortion (C_io(OFF) = 3.5 pF typical)
Fast switching frequency (f_OE = 20 MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (I_CC = 0.25 mA typical)
V_CC operating range from 2.3 V to 3.6 V
Data I/Os support 0 to 5 V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
Control inputs can be driven by TTL or 5 V/3.3 V CMOS outputs
I_off supports partial-power-down mode operation
Latch-up performance exceeds 100 mA per JESD 78, Class II

⁽¹⁾For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.

The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

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기타 프로토콜/버스 스위치 및 멀티플렉서 찾기

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4개 모두 보기

상위 문서	유형	직함	형식 옵션
*	데이터 시트	SN74CB3Q3305 Dual FET Bus Switch 2.5-V or 3.3-V Low-Voltage High-Bandwidth Bus Switch datasheet (Rev. D)	PDF \| HTML	2021. 9. 15
	애플리케이션 노트	Selecting the Correct Texas Instruments Signal Switch (Rev. E)	PDF \| HTML	2022. 6. 2
	애플리케이션 노트	Multiplexers and Signal Switches Glossary (Rev. B)	PDF \| HTML	2021. 12. 1
	Application brief	Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C)	PDF \| HTML	2021. 1. 6

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소형 표면 실장 IC(집적 회로)와 쉽고 빠르며 경제적인 방식으로 인터페이싱하는 방법을 제공하는 DIP 어댑터 평가 모듈(DIP-ADAPTER-EVM)로 연산 증폭기 프로토타이핑 및 테스트 속도를 높이세요. 제품에 포함된 Samtec 터미널 스트립을 사용하여 지원되는 연산 증폭기를 연결하거나 기존 회로에 직접 연결할 수 있습니다.

DIP 어댑터 EVM 키트는 다음을 포함해 가장 널리 사용되는 6개의 업계 표준 패키지를 지원합니다.

D 및 U(SOIC-8)
PW(TSSOP-8)
DGK(MSOP-8, VSSOP-8)
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