TPSM706A5

The TPSM706A5 is a GaN, synchronous buck DC/DC module that integrates a controller, GaN FETs, a power inductor, and passives in a compact, enhanced HotRod QFN package. These features provide easy implementation of ultra-high density, excellent power conversion efficiency, and low electromagnetic interference (EMI) designs. The integrated low RDS(on) GaN FETs with near-zero dead-time switching performance enable up to 15A of output current across a wide input voltage range of 5V to 65V (80V transients).

Phase stackable with synchronized interleaving, the peak current-mode architecture of the TPSM706A5 supports current sharing with paralleled phases for even higher output current. Along with constant-voltage (CV) operation, a dual-loop architecture with shared compensation provides constant-current (CC) regulation for battery charging and other current-source type loads. This cohesive approach enables a seamless transition between CV and CC modes, effectively reducing the bill of materials (BOM) cost for applications that require average output current control. VSET and ISET inputs facilitate dynamic adjustment of the respective CV and CC loop setpoints, and an IMON output provides average output current monitoring.

A high-side switch minimum on-time of 25ns facilitates large step-down ratios, enabling the direct conversion from 24V or 48V inputs to low-voltage rails for reduced system design cost and complexity. The TPSM706A5 continues to operate during input voltage dips as low as 5V, at close to 100% duty cycle if needed. The 20µA sleep quiescent current with the output voltage in regulation extends operating run-time in battery-powered systems.

The TPSM706A5 includes several features to simplify compliance with CISPR 11 and CISPR 32 conducted emissions requirements. First, the highly-integrated module not only minimize the design size but also minimize the parasitic inductance and improves EMI performance. Predictably timed GaN FET gate drivers along with integrated bootstrap switch and capacitor minimize dead time during switching transitions, reducing switching losses and improving EMI performance at high input voltage and high switching frequency. To reduce input capacitor ripple current and EMI filter size, interleaved operation using a SYNCOUT signal with programmable phase shift works well for cascaded, multichannel or multiphase designs. Resistor-adjustable switching frequency as high as 2.2MHz can be synchronized to an external clock source up to 2.64MHz to eliminate beat frequencies in noise-sensitive applications. Finally, the TPSM706A5 has dual-random spread spectrum (DRSS), a unique EMI-reduction feature that combines low-frequency triangular and high-frequency random modulations to mitigate EMI disturbances across lower and higher frequency bands, respectively.

Additional features of the TPSM706A5 include 150°C maximum junction temperature operation, user-selectable PFM mode for lower current consumption during light-load conditions, integrated bootstrap capacitor with synchronous charging for robust level shifting, open-drain power-good (PG) indicator for fault reporting and output monitoring, precision enable input for input UVLO, monotonic start-up into prebiased loads, dual-input VCC bias subregulator, hiccup-mode overload protection, and thermal shutdown protection with automatic recovery for the controller.

The TPSM706A5 comes in a 9.2mm × 8.8mm, thermally enhanced, 30-pin eQFN package using a flip-chip routable leadframe (FCRLF) packaging technique. Leveraging high-performance GaN power FETs (based on TI’s proprietary GaN IC technology), thermal management and EMI mitigation features, CC/CV operation, and small design size, the TPSM706A5 represents an excellent point-of-load regulator choice for applications requiring the most efficient GaN design with useable current, lifetime reliability, and cost advantages.