홈 RF 및 마이크로파 RF 증폭기 RF FDA(완전 차동 증폭기)
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RF 및 마이크로파
RF 증폭기
RF FDA(완전 차동 증폭기)
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TRF0108-SP

활성

Radiation-hardness-assured (RHA), near-DC to 12GHz, differential to single-ended (D2S) RF amplifier

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데이터 시트

TRF0108-SP

활성
데이터 시트 지금 주문하기

제품 상세 정보

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.9 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 26.5 P1dB (typ) (dBm) 11 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -43 OIP2 (typ) (dBm) 34 2nd harmonic (dBc) -39 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.9 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 26.5 P1dB (typ) (dBm) 11 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -43 OIP2 (typ) (dBm) 34 2nd harmonic (dBc) -39 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
WQFN-FCRLF (RPV) 12 4 mm² (2 mm × 2 mm)
  • Standard microcircuit drawing (SMD), 5962-25201
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 100krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 100krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 75MeV-cm2/mg
      • Single event transient (SET) characterized to LET of 75MeV‑cm2/mg
  • Space-grade QML-P
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA
  • Standard microcircuit drawing (SMD), 5962-25201
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 100krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 100krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 75MeV-cm2/mg
      • Single event transient (SET) characterized to LET of 75MeV‑cm2/mg
  • Space-grade QML-P
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA

The TRF0108-SP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SP or AFE7950-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.

The TRF0108-SP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SP or AFE7950-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.
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기술 자료

검색된 결과가 없습니다. 검색어를 지우고 다시 시도하세요.
4개 모두 보기
상위 문서 유형 직함 형식 옵션 최신 영어 버전 다운로드 날짜
* 데이터 시트 TRF0108-SP Radiation-Hardness-Assured (RHA), Near-DC to 12GHz, Differential to Single-Ended RF Amplifier datasheet PDF | HTML 2026. 7. 10
* 방사능 및 안정성 보고서 TRF0108-SP Total Ionizing Dose (TID) Report (Rev. A) 2026. 3. 30
* 방사능 및 안정성 보고서 TRF0108-SP Single-Event Effects (SEE) Radiation Report 2026. 3. 27
선택 가이드 TI Space Products (Rev. L) 2026. 3. 27

설계 및 개발

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시뮬레이션 모델

TRF0108-SP S-Parameter Model

SLOM538.ZIP (8 KB) - S-변수 모델
지원되는 제품 및 하드웨어
계산 툴

RF-CASCADE-CALC-TOOL — TI RF 캐스케이드 계산기

A browser-based RF lineup analysis tool supporting up to 10 stages. Computes gain, NF, OIP3, OIP2, OP1dB, and derived metrics. Features dual-axis Plotly charts, P1dB saturation detection, and export to CSV
지원되는 제품 및 하드웨어
인증

TRF0108SP-EVM-DOC-CERT — TRF0108SP-EVM EU Declaration of Conformity (DoC)

TRF0108SP-EVM EU Declaration of Conformity (DoC)
지원되는 제품 및 하드웨어
패키지 핀 CAD 기호, 풋프린트 및 3D 모델
WQFN-FCRLF (RPV) 12 Ultra Librarian
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