LMG3411R150
- TI GaN process qualified through accelerated reliability in-application hard-switching profiles
- Enables high-density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm × 8 mm QFN package for ease of design and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V of unregulated supply needed
- Integrated gate driver
- Zero common source inductance
- 20-ns propagation delay for high-frequency design
- Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
- 25-V/ns to 100-V/ns adjustable slew rate
- Robust protection
- Requires no external protection components
- Overcurrent protection with <100 ns response
- Greater than 150-V/ns slew rate immunity
- Transient overvoltage immunity
- Overtemperature protection
- Undervoltage lockout (UVLO) protection on all supply rails
- Device Options:
- LMG3410R150: Latched overcurrent protection
- LMG3411R150: Cycle-by-cycle overcurrent proection
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) | PDF | HTML | 2020年 2月 13日 |
White paper | Achieving GaN Products With Lifetime Reliability | PDF | HTML | 2021年 6月 2日 | |
White paper | 結合 TI GaN FETs 與 C2000™ 即時 MCU,實現功率密集與有效率的數位電源系統 | 2021年 3月 18日 | ||
More literature | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | 2020年 10月 20日 | ||
Analog Design Journal | Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC | 2020年 9月 22日 | ||
Application note | Thermal Considerations for Designing a GaN Power Stage (Rev. B) | 2020年 8月 4日 | ||
More literature | GaN FET Reliability to Power-line Surges Under Use-conditions | 2019年 3月 25日 | ||
Application note | Third quadrant operation of GaN | 2019年 2月 25日 | ||
Technical article | Searching for the newest innovations in power? Find them at APEC | PDF | HTML | 2019年 2月 9日 | |
EVM User's guide | LMG3411R150-031 EVM user guide | 2019年 1月 17日 |
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
LMG34XX-BB-EVM — 適用於 LMG341x 系列的 LMG34xx GaN 系統級評估主機板
LMG34XX-BB-EVM 是一款易於使用的分接板,可當作同步降壓轉換器配置任何 LMG341x 半橋電路板,例如 LMG3410-HB-EVM。透過提供功率級、偏壓電源和邏輯電路,此 EVM 可快速測量 GaN 裝置切換。此 EVM 能夠提供高達 8 A 的輸出電流,運用適當的溫度管理 (強制空氣、低頻率運作等),確保不超過最高運作溫度。EVM 屬於開迴路電路板,不適合執行瞬態量測。
只需要單脈衝寬度調變輸入,具有互補脈衝寬度調變訊號,和板上產生的對應失效時間。使用具有短接地彈簧的示波器探針,提供探針點來測量主要邏輯和功率級波形。
LMG3411EVM-031 — 具有逐週期過電流保護半橋子卡的 LMG3411R150 600-V 150-mΩ GaN
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
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封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
VQFN (RWH) | 32 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點