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SN54SC8T574-SEP

現行

具有邏輯位準移位器的耐輻射八路 D 型正反器

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產品規格表

SN54SC8T574-SEP

現行
產品規格表 立即訂購

產品詳細資料

Technology family SCxT Number of channels 8 IOH (max) (mA) -25 IOL (max) (mA) 25 Features Balanced outputs, Over-voltage tolerant inputs, Voltage translation Input type TTL-Compatible CMOS Output type 3-State Operating temperature range (°C) -55 to 125
Technology family SCxT Number of channels 8 IOH (max) (mA) -25 IOL (max) (mA) 25 Features Balanced outputs, Over-voltage tolerant inputs, Voltage translation Input type TTL-Compatible CMOS Output type 3-State Operating temperature range (°C) -55 to 125
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4
  • Vendor item drawing available, VID V62/25629-01XE
  • Radiation - Total Ionizing Dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg

  • Wide operating range of 1.2V to 5.5V

  • Single-supply voltage translator:

    • Up translation:

      • 1.2V to 1.8V

      • 1.5V to 2.5V

      • 1.8V to 3.3V

      • 3.3V to 5.0V

    • Down translation:

      • 5.0V, 3.3V, 2.5V to 1.8V
      • 5.0V, 3.3V to 2.5V
      • 5.0V to 3.3V
  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic:
    • Supports defense and aerospace applications
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Meets NASA ASTM E595 outgassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • Vendor item drawing available, VID V62/25629-01XE
  • Radiation - Total Ionizing Dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg

  • Wide operating range of 1.2V to 5.5V

  • Single-supply voltage translator:

    • Up translation:

      • 1.2V to 1.8V

      • 1.5V to 2.5V

      • 1.8V to 3.3V

      • 3.3V to 5.0V

    • Down translation:

      • 5.0V, 3.3V, 2.5V to 1.8V
      • 5.0V, 3.3V to 2.5V
      • 5.0V to 3.3V
  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic:
    • Supports defense and aerospace applications
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Meets NASA ASTM E595 outgassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability

The SN54SC8T574-SEP devices are octal edge-triggered D-type flip-flops..

These devices feature 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. The devices are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

On the positive transition of the clock (CLK) input, the Q outputs are set to the logic levels set up at the data (D) inputs.

The SN54SC8T574-SEP devices are octal edge-triggered D-type flip-flops..

These devices feature 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. The devices are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

On the positive transition of the clock (CLK) input, the Q outputs are set to the logic levels set up at the data (D) inputs.
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類型 標題 日期
* Data sheet SN54SC8T574-SEP Radiation Tolerant Octal Edge-Triggered D-Type Flip-Flops with 3-State Outputs datasheet PDF | HTML 2025年 1月 26日
* Radiation & reliability report SN54SC8T595-SEP Single-Event Effects (SEE) Radiation Report (Rev. A) PDF | HTML 2025年 3月 5日
* Radiation & reliability report SN54SC8T574-SEP Production Flow and Reliability Report PDF | HTML 2025年 2月 21日
* Radiation & reliability report SN54SC8T574-SEP Total Ionizing Dose (TID) Report 2025年 2月 19日

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