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TPS7H6101-SEP

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產品規格表

TPS7H6101-SEP

現行
產品規格表 立即訂購

產品詳細資料

VDS (max) (V) 200 RDS(on) (mΩ) 15 Features Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection Rating Space Operating temperature range (°C) -55 to 125
VDS (max) (V) 200 RDS(on) (mΩ) 15 Features Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection Rating Space Operating temperature range (°C) -55 to 125
UNKNOWN (NPR) 64 See data sheet LGA (NPR) 64 11664 mm² (108 mm × 108 mm)
  • Radiation performance:
    • Total ionizing dose (TID) characterized(1)
      • Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
    • Single-event effects (SEE) characterized(2)
      • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
      • Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
  • 200V ehancement mode (e-mode) GaN FET half bridge
    • 15mΩRDS(ON) (typical)
    • Up to 2MHz operation
  • LGA package:
    • Thermally optimized 12mm × 9mm LGA package with thermal pads
    • Integrated gate drive resistors
    • Low common source inductance packaging
    • Electrically isolated high-side and low-side
  • Flexible control for various half-bridge and two switch power supply topologies
    • Low propagation delay
    • Two operational modes
      • Single PWM input with adjustable dead time
      • Two independent inputs
    • Programmable dead time control
    • Selectable input interlock protection in independent input mode
    • 5V gate drive supply for robust FET operation
  • Radiation performance:
    • Total ionizing dose (TID) characterized(1)
      • Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
    • Single-event effects (SEE) characterized(2)
      • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
      • Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
  • 200V ehancement mode (e-mode) GaN FET half bridge
    • 15mΩRDS(ON) (typical)
    • Up to 2MHz operation
  • LGA package:
    • Thermally optimized 12mm × 9mm LGA package with thermal pads
    • Integrated gate drive resistors
    • Low common source inductance packaging
    • Electrically isolated high-side and low-side
  • Flexible control for various half-bridge and two switch power supply topologies
    • Low propagation delay
    • Two operational modes
      • Single PWM input with adjustable dead time
      • Two independent inputs
    • Programmable dead time control
    • Selectable input interlock protection in independent input mode
    • 5V gate drive supply for robust FET operation

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver. Integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver. Integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TPS7H6101-SEP 200V, 10A GaN Half Bridge Power Stage datasheet (Rev. A) PDF | HTML 2026/3/26
* 輻射及可靠性報告 TPS7H6101-SEP Total Ionizing Dose (TID) Radiation Report (Rev. B) 2026/8/21
* 輻射及可靠性報告 Single-Event Effects (SEE) Radiation Report of the TPS7H6101-SEP PDF | HTML 2026/4/2
* 輻射及可靠性報告 TPS7H6101-SEP Production Flow and Reliability Report (Rev. A) PDF | HTML 2026/3/27
* 輻射及可靠性報告 TPS7H6101 Neutron Displacement Damage (NDD) Characterization Report 2026/2/20
應用說明 How to Run Matlab© Simulink© Motor Control Example on C2000 LaunchPad™ Development Kit PDF | HTML 2026/9/15
白皮書 IC Sourcing for Space: Pros and Cons of Up-screening COTS Versus Space Enhanced Products (SEP) PDF | HTML 2026/7/28
應用說明 Highly Scalable Space Motor Control Platform based on TI’s Space Enhanced Products (-SEP) and Space Products PDF | HTML 2026/6/8
選擇指南 TI Space Products (Rev. L) 2026/3/27
證書 TPS7H6101EVM EU Declaration of Conformity (DoC) PDF | HTML 2025/4/16
應用說明 Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 2022/9/15
電子書 Radiation Handbook for Electronics (Rev. A) 2019/5/21

設計與開發

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開發板

TPS7H6101EVM — TPS7H6101-SEP 評估模組

TPS7H6101EVM 使用 J13 上的輸入電壓軌，為 100V 的 PVIN 供電裝置預設以 PWM 模式運作，僅需些微變更即可改用 IIM 模式。在 J8 輸入 0V 至 5V 波形時，TPS7H6101-SP 將依您選取的工作週期與頻率，作為降壓轉換器運作。TPS7H6101EVM 會依照快速入門指南中所列參數進行設定與測試。使用超出快速入門指南範圍的輸入時，請考量電路板的散熱管理與電感器的 18A 飽和電流。
使用指南: PDF | HTML
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模擬型號

TPS7H6101-SP PSpice Transient Model

SNOM820.ZIP (66 KB) - PSpice 模型
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參考設計

TIDA-010984 — 航太級、SWaP 最佳化、10A、150V BLDC 與步進馬達控制平台參考設計

TIDA-010984 展示了一套完整的航太級馬達控制平台。此設計支援單一 2 相位和 3 相位步進馬達或雙馬達配置，可採用梯形或磁場定向控制 (FOC)，並透過接腳相容的元件，在不同輻射耐受等級之間進行擴展。藉由 MATLAB®/Simulink® 模型架構設計，可加速軟體開發，而 GaN 技術和高裝置整合度的設計，則可將電路板面積和散熱開銷降至最低。

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UNKNOWN (NPR) 64 Ultra Librarian
LGA (NPR) 64 Ultra Librarian
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