首頁 電源管理 閘極驅動器 隔離式閘極驅動器
首頁
電源管理
閘極驅動器
隔離式閘極驅動器
最新

UCC21330-Q1

現行

具啟用邏輯與可編程失效時間的車用 3kVRMS 4A/6A 雙通道閘極驅動器

立即訂購
產品規格表

UCC21330-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Capable Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12
Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Capable Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12
SOIC (D) 16 59.4 mm² 9.9 x 6

  • Universal: dual low-side, dual high-side or halfbridge driver

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C4B
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 8V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

  • Universal: dual low-side, dual high-side or halfbridge driver

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C4B
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 8V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

The UCC21330-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21330-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21330-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21330-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21330-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21330-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
open-in-new 尋找其它 隔離式閘極驅動器
下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件，然後再試一次。
檢視所有 1
類型 標題 日期
* Data sheet UCC21330x -Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver datasheet PDF | HTML 2024年 1月 26日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC21220EVM-009 — UCC21220 4A、6A 3.0kVRMS 隔離式雙通道閘極驅動器評估模組

UCC21220EVM-009 is designed for evaluating UCC21220, which is a 3.0-kVRMS Isolated Dual-Channel Gate Driver with 4.0-A source and 6.0-A sink peak current capability. This EVM could be served to evaluate the driver IC against its datsheet. The EVM can also be used as Driver IC component selection (...)
使用指南: PDF
TI.com 無法提供
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
要求
封裝 引腳 下載
SOIC (D) 16 檢視選項
適用 TI 的評估品項標準條款與條件。

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 資格摘要
  • 進行中可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

以英文檢視所有論壇主題

內容係由 TI 和社群貢獻者依「現狀」提供，且不構成 TI 規範。檢視使用條款。

若有關於品質、封裝或訂購 TI 產品的問題，請參閱 TI 支援。​​​​​​​​​​​​​​

影片