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UCC218200-Q1

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車用 5kVrms、±15A、單通道隔離閘極驅動器、DESAT 及進階保護

產品詳細資料

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1063 Transient isolation voltage (VIOTM) (VPK) 7071 Peak output current (A) 15 Peak output current (source) (typ) (A) 15 Peak output current (sink) (typ) (A) 15 Features AEC-Q100 Automotive Qual, High CMTI, High-side driver, Integrated protections: UVLO, Isolated, Overcurrent protection, Under voltage lock out, Voltage monitoring Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) -0.3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Operating temperature range (°C) -40 to 150 Rating Automotive Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1063 Transient isolation voltage (VIOTM) (VPK) 7071 Peak output current (A) 15 Peak output current (source) (typ) (A) 15 Peak output current (sink) (typ) (A) 15 Features AEC-Q100 Automotive Qual, High CMTI, High-side driver, Integrated protections: UVLO, Isolated, Overcurrent protection, Under voltage lock out, Voltage monitoring Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) -0.3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Operating temperature range (°C) -40 to 150 Rating Automotive Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
SSOP (DFP) 20 58.195 mm² 5.65 x 10.3
  • 5kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • SiC MOSFETs and IGBTs up to 1500Vpk
  • 30V maximum output drive voltage (VDD-VEE)
  • ±15A drive strength with split output
  • 200-V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 9V threshold
  • Dedicated Soft Shut Down (SSD) pin with 2.5A sinking capability. Shut down current is controllable by an external resistor.
  • 4A internal active Miller clamp
  • Overcurrent reporting on FLT and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • 12V VDD UVLO and -3V VEE UVLO with power good on RDY
  • Overtemperature protection with power good on RDY
  • Output voltage gate monitor with real-time output state feedback on OUT_FB.
  • Active short circuit (ASC) inputs on both primary and secondary sides to turn on power switch during system fault.
  • Built-in self test diagnostics during power up for DESAT, UVLO, and output voltage gate monitor comparators.
  • 20-Pin DFP wide body package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • 5kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • SiC MOSFETs and IGBTs up to 1500Vpk
  • 30V maximum output drive voltage (VDD-VEE)
  • ±15A drive strength with split output
  • 200-V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 9V threshold
  • Dedicated Soft Shut Down (SSD) pin with 2.5A sinking capability. Shut down current is controllable by an external resistor.
  • 4A internal active Miller clamp
  • Overcurrent reporting on FLT and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • 12V VDD UVLO and -3V VEE UVLO with power good on RDY
  • Overtemperature protection with power good on RDY
  • Output voltage gate monitor with real-time output state feedback on OUT_FB.
  • Active short circuit (ASC) inputs on both primary and secondary sides to turn on power switch during system fault.
  • Built-in self test diagnostics during power up for DESAT, UVLO, and output voltage gate monitor comparators.
  • 20-Pin DFP wide body package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

The UCC218200-Q1 is a galvanically isolated single-channel gate driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. The UCC218200-Q1 has up to ±15A peak source and sink current.

The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage, 10kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >200V/ns common-mode noise immunity (CMTI).

The UCC218200-Q1 includes state-of-art protection features such as fast overcurrent and short circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness, active short circuit inputs on both the primary and secondary sides, output voltage gate monitoring, and built-in self test during startup.

The UCC218200-Q1 is a galvanically isolated single-channel gate driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. The UCC218200-Q1 has up to ±15A peak source and sink current.

The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage, 10kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >200V/ns common-mode noise immunity (CMTI).

The UCC218200-Q1 includes state-of-art protection features such as fast overcurrent and short circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness, active short circuit inputs on both the primary and secondary sides, output voltage gate monitoring, and built-in self test during startup.

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* Data sheet UCC218200-Q1 15A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Advanced Protection datasheet PDF | HTML 2025年 5月 30日

設計與開發

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開發板

UCC218XXXEVM-111 — UCC218xxx 評估模組

UCC218XXXEVM-111 是精巧型半橋閘極驅動器電路板,由兩個單通道隔離式閘極驅動器組成。其提供所需的隔離式偏壓電源、驅動電流、保護以及檢測功能,足以驅動數種不同型號的 Wolfspeed 碳化矽(SiC)MOSFET 模組,以及具有類似針腳配置的其他 IGBT 或 SiC MOSFET 模組。板載隔離式偏壓可透過更換被動元件來提供可調式的隔離電壓。

電路板的精巧體積結合 UCC218XXX 的 5kVrms 強化型隔離,非常適合用於 Wolfspeed SiC 模組進行雙脈衝測試及短路測試等高電壓測試。該電路板也可搭配所有 UCC218xxx 變體使用,且只需極少的板載修改。

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