UCC27200-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1:
–40°C to 125°C Ambient Operating Temperature Range - Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C5
- Device Temperature Grade 1:
- Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration
- Maximum Boot Voltage: 120 V
- Maximum VDD Voltage: 20 V
- On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
- Greater than 1 MHz of Operation
- 20-ns Propagation Delay Times
- 3-A Sink, 3-A Source Output Currents
- 8-ns Rise and 7-ns Fall Time With 1000-pF Load
- 1-ns Delay Matching
- Specified from –40°C to 140°C (Junction Temperature)
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The UCC2720x-Q1 family of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1 ns between the turnon and turnoff of each other.
An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC2720x-Q1 are offered – the UCC27200-Q1 has high-noise-immune CMOS input thresholds, and the UCC27201-Q1 has TTL-compatible thresholds.
Both devices are offered in the 8-pin SO PowerPAD (DDA) package.
For all available packages, see the orderable addendum at the end of the data sheet.您可能會感興趣的類似產品
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技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | UCC2720x-Q1 120-V Boot, 3-A Peak, High-Frequency High-Side and Low-Side Driver datasheet (Rev. C) | PDF | HTML | 2016年 8月 2日 |
Application note | Understanding and comparing peak current capability of gate drivers | PDF | HTML | 2021年 3月 30日 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 |
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
UCC27200 and UCC27200A TINA-TI Transient Reference Design
封裝 | 引腳 | 下載 |
---|---|---|
HSOIC (DDA) | 8 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點