UCC27517A-Q1

現行

具 5-V UVLO 與雙輸入架構的車用 4-A/4-A 單通道閘極驅動器

產品詳細資料

Operating temperature range (°C) -40 to 125 Rating Automotive Input supply voltage (max) (V) 18 Input supply voltage (min) (V) 4.5 Number of channels 1
Operating temperature range (°C) -40 to 125 Rating Automotive Input supply voltage (max) (V) 18 Input supply voltage (min) (V) 4.5 Number of channels 1
SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Automotive Qualified Grade 1: –40°C
      to 125°C Ambient Operating Temperature
      Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak-Source and Sink Symmetrical Drive
  • Ability to Handle Negative Voltages (–5 V) at
    Inputs
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5 to 18-V Single-Supply Range
  • Outputs Held Low During VDD UVLO (ensures
    glitch-free operation at power up and power down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (independent of supply voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual Input Design (choice of an inverting (IN– pin)
    or non-inverting (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C to 140°C
  • 5-Pin DBV (SOT-23) Package Option
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Automotive Qualified Grade 1: –40°C
      to 125°C Ambient Operating Temperature
      Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak-Source and Sink Symmetrical Drive
  • Ability to Handle Negative Voltages (–5 V) at
    Inputs
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5 to 18-V Single-Supply Range
  • Outputs Held Low During VDD UVLO (ensures
    glitch-free operation at power up and power down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (independent of supply voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual Input Design (choice of an inverting (IN– pin)
    or non-inverting (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C to 140°C
  • 5-Pin DBV (SOT-23) Package Option

The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27517A-Q1 device handles –5 V at input.

The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27517A-Q1 device handles –5 V at input.

The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

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類型 標題 日期
* Data sheet UCC27517A-Q1 Single-Channel High-Speed Low-Side Gate Driver with Negative Input Voltage Capability (with 4-A Peak Source and Sink) datasheet (Rev. B) PDF | HTML 2015年 8月 28日
Functional safety information UCC27517A-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 2021年 6月 16日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

模擬型號

UCC27517 PSpice Transient Model (Rev. B)

SLUM286B.ZIP (51 KB) - PSpice Model
模擬型號

UCC27517 TINA-TI Transient Reference Design

SLUM317.TSC (67 KB) - TINA-TI Reference Design
模擬型號

UCC27517 TINA-TI Transient Spice Model

SLUM318.ZIP (8 KB) - TINA-TI Spice Model
模擬型號

UCC27517 Unencrypted PSpice Transient Model

SLUM491.ZIP (2 KB) - PSpice Model
參考設計

TIDA-050063 — 高電壓固態繼電器主動預充電參考設計

此參考設計引進創新電路拓撲,可為混合動力汽車 (HEV) 與電動車 (EV) 的大型 DC 鏈路電容器預先充電。此參考設計的系統不需要微控制器,也可搭配 5-V 電源運作。參考設計具有 TPSI3052-Q1,以提供 5-kVRMS 強化隔離額定值。TPSI3052-Q1 裝置整合了層壓變壓器,在將訊號和電源傳輸至二次側時實現隔離。如此就不需要離散隔離式偏壓電源。此外,TPSI3052-Q1 裝置可爲位於高電壓 (HV) 側的外部電路提供電源,以監控電流。此參考設計最多可支援 800-V 系統及高達 4-AAVG 的改變電流,可為高達 2-mF 的負載電容充電。
Design guide: PDF
參考設計

TIDA-080004 — 適用於擴增實境抬頭顯示的電子與 LED 驅動器參考設計

This reference design provides an electronics subsystem designed to drive an automotive augmented reality (AR) head-up display (HUD). DLP® technology enables bright, crisp, highly saturated head-up displays that project critical driving information onto the windshield of the car, reducing (...)
Design guide: PDF
電路圖: PDF
參考設計

PMP21404 — 適用於車用 DC/DC 逆變器的高效升壓轉換器電源供應參考設計

This single-phase boost converter operates over an input voltage range of 120 V - 350 V and provides a non-isolated output of 221 V / 0.87 A. Input voltages above 221 V are passed through to the output. With an efficiency of greater than 97%, component losses are reduced, which results in lowers (...)
Test report: PDF
電路圖: PDF
封裝 引腳 下載
SOT-23 (DBV) 5 檢視選項

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 資格摘要
  • 進行中可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

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