CSD1FPCHEVM-890

FemtoFET P-ch Evaluation Module

CSD1FPCHEVM-890

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Overview

This FemtoFET P-ch EVM includes six daughter cards, each card containing a different FemtoFET p-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The six FemtoFETs range from 12V to 20V Vds, and the size of the devices include F3 (0.6x0.7mm), F4 (0.6x1.0mm), and F5 (0.8x1.5mm).

Features
  • Easy handling of these Land Grid Array (LGA) packaged parts
  • Full range of Vds and package size
  • Seven daughter cards can be snapped to create individual boards, with one FET per daughter card
  • FemtoFETs have the best Size*Resistance in the FET industry
P-channel MOSFETs
CSD23280F3 -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection CSD23285F5 -12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection CSD23382F4 -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection CSD25480F3 -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection CSD25481F4 -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection CSD25484F4 -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection

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Evaluation board

CSD1FPCHEVM-890 – FemtoFET P-ch Evaluation Module

In stock
Limit: 3
TI's Standard Terms and Conditions for Evaluation Items apply.

Technical documentation

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Type Title Date
* User guide Ultra-Small Footprint P-Channel FemtoFET™ MOSFET Test EVM Dec. 06, 2017
Certificate CSD1FPCHEVM-890 EU Declaration of Conformity (DoC) Jan. 02, 2019

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