LMG3522R030
650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
LMG3522R030
- 650V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3526R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance
The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TIs low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
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Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | LMG352xR030 650 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. A) | PDF | HTML | 23 May 2024 |
Application note | Implementation of Single-Phase Off-Grid Inverter With Digital Control Using PLECS Simulation | PDF | HTML | 15 Apr 2024 | |
Technical article | 高轉換速率的負載暫態測試 | PDF | HTML | 20 Mar 2024 | |
Technical article | 높은 회전율로 부하 과도 테스트 | PDF | HTML | 20 Mar 2024 | |
Analog Design Journal | 以高密度、GaN 最佳化 PFC 轉換器解決 AC 壓降復原問題 | PDF | HTML | 18 Mar 2024 | |
Analog Design Journal | 고밀도 GaN 최적화 PFC 컨버터에서 AC 드롭아웃 복구 문제 해결 | PDF | HTML | 18 Mar 2024 | |
Technical article | Load transient testing with high slew rates | PDF | HTML | 19 Dec 2023 | |
Analog Design Journal | Solving AC dropout recovery in a high-density GaN-optimized PFC converter | PDF | HTML | 19 Sep 2023 | |
Technical article | The benefits of GaN for battery test systems | PDF | HTML | 07 Oct 2022 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
LMG3522EVM-042 — LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card
LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
Supported products & hardware
Products
Gallium nitride (GaN) power stages
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
Supported products & hardware
Products
Gallium nitride (GaN) power stages
TIDA-010938 — 10kW, GaN-based single-phase string inverter with battery energy storage system reference design
PMP41078 — High-voltage to low-voltage DC-DC converter reference design with GaN HEMT
PMP22951 — 54-V, 3-kW phase-shifted full-bridge with active clamp reference design
PMP23338 — 3.6kW single-phase totem-pole bridgeless PFC reference design with e-meter functionality
PMP40988 — Variable-frequency, ZVS, 5-kW, GaN-based, two-phase totem-pole PFC reference design
PMP23069 — 3-kW, 180-W/in3 single-phase totem-pole bridgeless PFC reference design with 16-A max input
PMP23126 — 3-kW phase-shifted full bridge with active clamp reference design with > 270-W/in3 power density
PMP23249 — 650-V 30-mΩ GaN FET daughter card reference design
Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
VQFN (RQS) | 52 | Ultra Librarian |
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