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Gallium nitride (GaN) power stages

LMG3522R030

ACTIVE

650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

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Data sheet

LMG3522R030

ACTIVE
Data sheet Order now

Product details

VDS (max) (mV) 650000 RDS(on) (mΩ) 30
VDS (max) (mV) 650000 RDS(on) (mΩ) 30
VQFN (RQS) 52 144 mm² 12 x 12
  • 650-V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns FET hold-off
    • 2-MHz switching frequency
    • 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5-V to 18-V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
  • Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
  • 650-V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns FET hold-off
    • 2-MHz switching frequency
    • 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5-V to 18-V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
  • Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance

The LMG3522R030 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3522R030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

The LMG3522R030 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3522R030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.
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Technical documentation

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Type Title Date
* Data sheet LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet PDF | HTML 25 Apr 2022
Application note Implementation of Single-Phase Off-Grid Inverter With Digital Control Using PLECS Simulation PDF | HTML 15 Apr 2024
Technical article 高轉換速率的負載暫態測試 PDF | HTML 20 Mar 2024
Technical article 높은 회전율로 부하 과도 테스트 PDF | HTML 20 Mar 2024
Analog Design Journal 以高密度、GaN 最佳化 PFC 轉換器解決 AC 壓降復原問題 PDF | HTML 18 Mar 2024
Analog Design Journal 고밀도 GaN 최적화 PFC 컨버터에서 AC 드롭아웃 복구 문제 해결 PDF | HTML 18 Mar 2024
Technical article Load transient testing with high slew rates PDF | HTML 19 Dec 2023
Analog Design Journal Solving AC dropout recovery in a high-density GaN-optimized PFC converter PDF | HTML 19 Sep 2023
Technical article The benefits of GaN for battery test systems PDF | HTML 07 Oct 2022

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Daughter card

LMG3522EVM-042 — LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card

LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

User guide: PDF
Not available on TI.com
Simulation model

LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model

SNOM768.ZIP (340 KB) - PLECS model
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Simulation model

LMG3522R030 PSpice Model

SNOM770.ZIP (644 KB) - PSpice Model
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CAD/CAE symbol

LMG3522R030 Step File

SNOR033.ZIP (701 KB)
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Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
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Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG2100R044 — 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 — 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG5200 — 80V GaN Half Bridge Power Stage
Gallium nitride (GaN) power stages
LMG2100R044 — 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 — 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3426R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3426R050 — 600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3526R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting LMG5200 — 80V GaN Half Bridge Power Stage
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Calculation tool

SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Download
Calculation tool

SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Download
Reference designs

PMP23338 — 3.6kW single-phase totem-pole bridgeless PFC reference design with e-meter functionality

This reference design is a Gallium nitride (GaN) based, 3.6kW, single-phase continuous conduction mode (CCM) totem-pole bridgeless power factor correction (PFC) converter, targeting M-CRPS power supply. This design includes e-meter functionality with 0.5% accuracy, eliminating the need for (...)
Test report: PDF
Reference designs

PMP40988 — Variable-frequency, ZVS, 5-kW, GaN-based, two-phase totem-pole PFC reference design

This reference design is a high-density and high-efficiency 5-kW totem-pole power factor correction (PFC) design. The design uses a two-phase totem-pole PFC operating with variable frequency and zero voltage switching (ZVS). The control uses a new topology and improved triangular current mode (...)
Test report: PDF
Reference designs

TIDA-010938 — 7.2-kW, GaN-based single-phase string inverter with battery energy storage system reference design

This reference design is a single phase string Inverter with two string inputs, each able to handle 10PV panels in series and one energy storage system port that can handle batteries stacks from 80V to 500V. The rated power from string inputs to battery storage systems is up to 7.2kW. The (...)
Design guide: PDF
Reference designs

PMP23069 — 3-kW, 180-W/in3 single-phase totem-pole bridgeless PFC reference design with 16-A max input

This reference design demonstrates a method to control a continuous conduction mode Totem pole power factor correction converter (PFC) using C2000 F28003x and F28004x microcontrollers. The PFC also works as inverter in grid connected (current controlled) mode. The converter is designed to support a (...)
Test report: PDF
Reference designs

PMP23126 — 3-kW phase-shifted full bridge with active clamp reference design with > 270-W/in3 power density

This reference design is a GaN-based 3-kW phase-shifted full bridge (PSFB) targeting maximum power density. The design has an active clamp to minimize voltage stress on the secondary synchronous rectifier MOSFETs enabling use of lower voltage-rating MOSFETs with better figure-of-merit (FoM). (...)
Test report: PDF
Reference designs

PMP22951 — 54-V, 3-kW phase-shifted full-bridge with active clamp reference design

is reference design is a GaN-based 3-kW phase-shifted full-bridge (PSFB) converter. This design uses an active clamp on the secondary side to minimize the voltage stress on the synchronous rectifier (SR) MOSFETs enabling the use of lower voltage rating MOSFETs that possess better figure-of-merit (...)
Test report: PDF
Reference designs

PMP23249 — 650-V 30-mΩ GaN FET daughter card reference design

This reference design features two LMG352XR0X0 650-V GaN FETs with an integrated driver and protection in a half-bridge configuration with all the required bias circuit and logic or power level shifting. Power stage, gate-driving, high-frequency current loops are fully enclosed on the board to (...)
Test report: PDF
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VQFN (RQS) 52 View options
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