SLUSF60 December   2023 BQ77307

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information BQ77307
    5. 6.5  Supply Current
    6. 6.6  Digital I/O
    7. 6.7  REGOUT LDO
    8. 6.8  Voltage References
    9. 6.9  Current Detector
    10. 6.10 Thermistor Pullup Resistor
    11. 6.11 Hardware Overtemperature Detector
    12. 6.12 Internal Oscillator
    13. 6.13 Charge and Discharge FET Drivers
    14. 6.14 Protection Subsystem
    15. 6.15 Timing Requirements - I2C Interface, 100kHz Mode
    16. 6.16 Timing Requirements - I2C Interface, 400kHz Mode
    17. 6.17 Timing Diagram
    18. 6.18 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Configuration
      1. 7.3.1 Commands and Subcommands
      2. 7.3.2 Configuration Using OTP or Registers
      3. 7.3.3 Device Security
    4. 7.4 Device Hardware Features
      1. 7.4.1  Voltage Protection Subsystem
      2. 7.4.2  Current Protection Subsystem
      3. 7.4.3  Unused VC Pins
      4. 7.4.4  Internal Temperature Protection
      5. 7.4.5  Thermistor Temperature Protections
      6. 7.4.6  Protection FET Drivers
      7. 7.4.7  Voltage References
      8. 7.4.8  Multiplexer
      9. 7.4.9  LDOs
      10. 7.4.10 Standalone Versus Host Interface
      11. 7.4.11 ALERT Pin Operation
      12. 7.4.12 Low Frequency Oscillator
      13. 7.4.13 I2C Serial Communications Interface
    5. 7.5 Protection Subsystem
      1. 7.5.1 Protections Overview
      2. 7.5.2 Primary Protections
      3. 7.5.3 Cell Open Wire Protection
      4. 7.5.4 Diagnostic Checks
    6. 7.6 Device Power Modes
      1. 7.6.1 Overview of Power Modes
      2. 7.6.2 NORMAL Mode
      3. 7.6.3 SHUTDOWN Mode
      4. 7.6.4 CONFIG_UPDATE Mode
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Performance Plot
      4. 8.2.4 Random Cell Connection Support
      5. 8.2.5 Startup Timing
      6. 8.2.6 FET Driver Turn-Off
      7. 8.2.7 Usage of Unused Pins
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Current Detector

Typical values stated where TA = 25°C and VBAT = 25.9 V, min/max values stated where TA = -40°C to 110°C and VBAT = 3 V to 38.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 1, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 186 271 355 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 2, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 670 794 921 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 3, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 1145 1317 1503 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 4, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 1594 1838 2089 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 5, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 2056 2364 2676 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 6, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 2516 2890 3276 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 7, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 3000 3419 3851 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 8, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 3460 3942 4443 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 9, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 3893 4466 5045 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 10, positive threshold (charging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. 4386 4994 5627 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 1, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 88 275 462 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 2, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 581 794 978 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 3, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 1050 1317 1537 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 4, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 1527 1836 2106 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 5, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 1974 2360 2711 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 6, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 2483 2885 3290 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 7, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 2897 3412 3885 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 8, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 3357 3933 4498 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 9, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 3793 4458 5062 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 10, positive threshold (charging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. 4261 4986 5654 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 1, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –719 –635 –546 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 2, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –1234 –1118 –1005 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 3, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –1736 –1605 –1469 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 4, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –2262 –2088 –1917 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 5, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –2794 –2579 –2354 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 6, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –3324 –3067 –2805 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 7, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –3849 –3552 –3245 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 8, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –4369 –4037 –3704 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 9, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –4913 –4527 –4129 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 10, negative threshold (discharging current) (1) TA = -20°C to 65°C.  Measured using averaged data to remove effects of noise. –5425 –5012 –4577 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 1, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –862 –630 –369 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 2, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –1340 –1113 –865 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 3, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –1887 –1600 –1284 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 4, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –2387 –2087 –1765 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 5, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –2949 –2575 –2179 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 6, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –3487 –3064 –2622 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 7, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –3991 –3548 –3083 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 8, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –4599 –4033 –3420 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 9, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –5067 –4521 –3918 µV
VCUR_DET_THR Current detection voltage threshold (VSRP – VSRN), setting = 10, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise. –5580 –5011 –4415 µV
tCUR_DET Measurement interval 2.44 ms
Specified by a combination of characterization and production test