LMG1205 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs | TI.com

LMG1205 (ACTIVE)

100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs - LMG1205
 

Description

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.

Features

  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2-A Peak Source, 5-A Sink Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100 VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon, Turnoff Strength
  • 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
  • Fast Propagation Times (35 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption

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Parametrics Compare all products in GaN FET Drivers

 
Driver Configuration
Number of Channels (#)
Power Switch
Bus Voltage (V)
Peak Output Current (A)
Input VCC (Min) (V)
Input VCC (Max) (V)
Rise Time (ns)
Fall Time (ns)
Prop Delay (ns)
Input Threshold
Rating
Operating Temperature Range (C)
Package Group
Package Size: mm2:W x L (PKG)
LMG1205 LM5113-Q1 LMG1020 LMG1210
Half Bridge     Half Bridge     Low Side     Half Bridge    
2     2     1     2    
MOSFET
GaNFET    
MOSFET
GaNFET    
MOSFET
GaNFET    
MOSFET
GaNFET    
90     90       200    
5     5     7     3    
4.5     4.5     4.75     6    
5.5     5.5     5.25     18    
7     7     0.21     0.5    
3.5     3.5     0.21     0.5    
35     30     2.5     10    
TTL     TTL     TTL     TTL    
Catalog     Automotive     Catalog     Catalog    
-40 to 125     -40 to 125     -40 to 125     -40 to 125    
DSBGA | 12     WSON | 10     DSBGA | 6     WQFN | 19    
See datasheet (DSBGA)     See datasheet (WSON)     See datasheet (DSBGA)     19WQFN: 12 mm2: 4 x 3 (WQFN | 19)