LMG1210 200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time | TI.com

LMG1210
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200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time

 

Description

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.

Features

  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent input mode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package

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Parametrics

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Part number Order Number of channels (#) Power switch Peak output current (A) Input VCC (Min) (V) Input VCC (Max) (V) Rise time (ns) Fall time (ns) Prop delay (ns) Input threshold Features Rating Operating temperature range (C) Package Group
LMG1210 Order now 2     MOSFET
GaNFET    
3     6     18     0.5     0.5     10     TTL       Catalog     -40 to 125     WQFN | 19    
LM5113-Q1 Order now 2     MOSFET
GaNFET    
5     4.5     5.5     7     3.5     30     TTL       Automotive     -40 to 125     WSON | 10    
LMG1020 Order now 1     MOSFET
GaNFET    
7     4.75     5.25     0.4     0.4     2.5     TTL     low-side, ultra-fast     Catalog     -40 to 125     DSBGA | 6    
LMG1205 Order now 2     MOSFET
GaNFET    
5     4.5     5.5     7     3.5     35     TTL       Catalog     -40 to 125     DSBGA | 12