BUF08630
- 10-Bit Resolution
- 8-Channel P-Gamma
- 1-Channel P-VCOM
- High Slew Rate VCOM: 45 V/µs
- 16x Rewritable Nonvolatile Memory
- Two Independent Pin-Selectable Memory Banks
- Rail-to-Rail Output:
- 300 mV Min Swing-to-Rail (10 mA)
- > 300 mA Max IOUT
- Low Supply Current
- Supply Voltage: 9 V to 20 V
- Digital Supply: 2 V to 5.5 V
- Two-Wire Interface:
- Supports 400 kHz and 3.4 MHz
- 1/2 AVDD Capability
- APPLICATIONS
- TFT-LCD Reference Drivers
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The BUF08630 offers eight programmable gamma channels and one programmable VCOM channel.
The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory.
The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz.
The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C.
기술 문서
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | Programmable Gamma-Voltage Generator w/Adjustable Gain Vcom & 1/2 AVDD Topology datasheet (Rev. A) | 2012/08/13 | |
| EVM User's guide | BUF08630EVM User Guide (Rev. A) | 2016/08/02 | ||
| Application note | Driving Capacitive Loads with Gamma Buffers | 2012/11/20 |
설계 및 개발
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| 패키지 | 핀 | 다운로드 |
|---|---|---|
| VQFN (RGW) | 20 | 옵션 보기 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치