계산 툴
데이터시트
UCC27200-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1:
–40°C to 125°C Ambient Operating Temperature Range - Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C5
- Device Temperature Grade 1:
- Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration
- Maximum Boot Voltage: 120 V
- Maximum VDD Voltage: 20 V
- On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
- Greater than 1 MHz of Operation
- 20-ns Propagation Delay Times
- 3-A Sink, 3-A Source Output Currents
- 8-ns Rise and 7-ns Fall Time With 1000-pF Load
- 1-ns Delay Matching
- Specified from –40°C to 140°C (Junction Temperature)
All trademarks are the property of their respective owners.
The UCC2720x-Q1 family of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1 ns between the turnon and turnoff of each other.
An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC2720x-Q1 are offered – the UCC27200-Q1 has high-noise-immune CMOS input thresholds, and the UCC27201-Q1 has TTL-compatible thresholds.
Both devices are offered in the 8-pin SO PowerPAD (DDA) package.
For all available packages, see the orderable addendum at the end of the data sheet.관심 가지실만한 유사 제품
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀
기술 문서
검색된 결과가 없습니다. 검색어를 지우고 다시 시도하십시오.
모두 보기5 | 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | UCC2720x-Q1 120-V Boot, 3-A Peak, High-Frequency High-Side and Low-Side Driver datasheet (Rev. C) | PDF | HTML | 2016/08/02 |
| Application note | Understanding and comparing peak current capability of gate drivers | PDF | HTML | 2021/03/30 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/02/28 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/02/28 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018/10/29 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
시뮬레이션 모델
UCC27200 and UCC27200A TINA-TI Transient Reference Design
SLUM112.TSC (138 KB) - TINA-TI Reference Design
시뮬레이션 모델
UCC27200 and UCC27200A TINA-TI Transient Spice Model
SLUM111.ZIP (9 KB) - TINA-TI Spice Model
시뮬레이션 모델
UCC27200 and UCC27200A Unencrypted PSpice Transient Model
SLUM523.ZIP (2 KB) - PSpice Model
| 패키지 | 핀 | 다운로드 |
|---|---|---|
| HSOIC (DDA) | 8 | 옵션 보기 |
주문 및 품질
포함된 정보:
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
포함된 정보:
- 팹 위치
- 조립 위치