The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.
The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.
0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.
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|Number of Channels (#)|
|Bus Voltage (V)|
|Peak Output Current (A)|
|Input VCC (Min) (V)|
|Input VCC (Max) (V)|
|Rise Time (ns)|
|Fall Time (ns)|
|Prop Delay (ns)|
|Operating Temperature Range (C)|
|Package Size: mm2:W x L (PKG)|
|Low Side||Half Bridge||Half Bridge||Half Bridge|
|-40 to 125||-40 to 125||-40 to 125||-40 to 125|
|See datasheet (DSBGA)||See datasheet (WSON)||See datasheet (DSBGA)||19WQFN: 12 mm2: 4 x 3(WQFN)|
|Order Now||Order Now||Order Now||Order Now|