UCC27211
- Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
- Maximum boot voltage 120V DC
- 3.7A source, 4.5A sink output currents
- Input pins can tolerate –10V to 20V and are independent of supply voltage range
- TTL compatible input versions
- 8V to 17V VDD operating range, (20V absolute maximum)
- 7.2ns rise and 5.5ns fall time with 1000pF load
- Fast propagation delay times (20ns typical)
- 4ns delay matching
- Symmetrical undervoltage lockout for high-side and low-side driver
- All industry standard packages available (SOIC-8, PowerPAD™ SOIC-8, 4mm × 4mm SON-8 and 4mm × 4mm SON-10)
- Specified from –40°C to 150°C
The UCC27211 driver is based on the popular UCC27201 MOSFET drivers, but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 3.7A source and 4.5A sink, thereby allowing for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure is now able to directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a maximum rating of 20V.
The switching node (HS pin) can handle –(24 – VDD) V maximum which allows the high-side channel to be protected from inherent negative voltages caused parasitic inductance and stray capacitance. UCC27211 (TTL inputs) has increased input hysteresis allowing for interface to analog or digital PWM controllers with enhanced noise immunity.
The low-side and high-side gate drivers are independently controlled and matched to 4 ns between the turnon and turnoff of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes.
Undervoltage lockout is provided for both the high-side and the low-side drivers providing symmetric turnon and turnoff behavior and forcing the outputs low if the drive voltage is below the specified threshold.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | UCC27211 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO datasheet (Rev. G) | PDF | HTML | 2024年 7月 18日 |
Application note | Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) | 2021年 4月 7日 | ||
Application note | Understanding and comparing peak current capability of gate drivers | PDF | HTML | 2021年 3月 30日 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||
Selection guide | Power Management Guide 2018 (Rev. R) | 2018年 6月 25日 | ||
Application note | Hybrid Battery Charger with Load Control for Telecom Equipments (Rev. A) | 2018年 5月 9日 | ||
More literature | Improving System Efficiency With a New Intermediate-Bus Architecture | 2011年 9月 20日 |
設計與開發
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封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
HSOIC (DDA) | 8 | Ultra Librarian |
SOIC (D) | 8 | Ultra Librarian |
VSON (DRM) | 8 | Ultra Librarian |
WSON (DPR) | 10 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。