SBASAZ3 October   2025 AMC0306M25-Q1

PRODMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information (D Package)
    5. 6.5  Thermal Information (DWV Package)
    6. 6.6  Power Ratings 
    7. 6.7  Insulation Specifications (Basic Isolation)
    8. 6.8  Insulation Specifications (Reinforced Isolation)
    9. 6.9  Safety-Related Certifications (Basic Isolation)
    10. 6.10 Safety-Related Certifications (Reinforced Isolation)
    11. 6.11 Safety Limiting Values (D Package)
    12. 6.12 Safety Limiting Values (DWV Package)
    13. 6.13 Electrical Characteristics
    14. 6.14 Switching Characteristics
    15. 6.15 Timing Diagrams
    16. 6.16 Insulation Characteristics Curves
    17. 6.17 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input
      2. 7.3.2 Modulator
      3. 7.3.3 Isolation Channel Signal Transmission
      4. 7.3.4 Digital Output
        1. 7.3.4.1 Output Behavior in Case of a Full-Scale Input
        2. 7.3.4.2 Output Behavior in Case of a Missing High-Side Supply
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Filter Design
        2. 8.2.2.2 Bitstream Filtering
      3. 8.2.3 Application Curve
    3. 8.3 Best Design Practices
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DWV|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.13 Electrical Characteristics

minimum and maximum specifications are at TA = –40°C to 125°C, AVDD = 3.0V to 5.5V, DVDD = 2.7V to 5.5 V, VINP = –250mV to 250mV, VINN = 0V, and sinc3 filter with OSR = 256 (unless otherwise noted); typical specifications are at TA = 25°C, fCLKIN = 20MHz with 50% duty cycle, AVDD = 5V, and DVDD = 3.3V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUTS
CIN Effective input sampling capacitance  1.8 pF
RIN Input impedance fCLK = 10MHz 50 55 60 kΩ
fCLK = 20MHz 25 27.5 30
IINP Input current VIN = (VINP – VINN) = VFSR, MAX, fCLK = 10MHz 4.5 μA
VIN = (VINP – VINN) = VFSR, MAX, fCLK = 20MHz 9
IINN Input current VIN = (VINP – VINN) = VFSR, MAX, fCLK = 10MHz –4.5 μA
VIN = (VINP – VINN) = VFSR, MAX, fCLK = 20MHz –9
CMTI Common-mode transient immunity  150 V/ns
DC ACCURACY
EO Offset error
INP = INN = AGND, TA = 25°C		 –200 30 200 µV
TCEO Offset error temperature drift(3) –2 2 µV/°C
EG Gain error(1)  TA = 25°C –0.2% ±0.03% 0.2%
TCEG Gain error temperature drift(4) –30 ±10 30 ppm/°C
INL Integral nonlinearity(2) Resolution: 16 bits –4 ±1 4 LSB
DNL Differential nonlinearity Resolution: 16 bits –0.99 0.99 LSB
CMRR Common-mode rejection ratio INP = INN, fIN = 0Hz,
VCM min ≤ VIN ≤ VCM max		 –98 dB
INP = INN, fIN from 0.1Hz to 10kHz,
VCM min ≤ VIN ≤ VCM max		 –100
PSRR Power-supply rejection ratio INP = INN = AGND,
AVDD from 3.0V to 5.5V, DC		 –87 dB
INP = INN = AGND,
AVDD from 3.0V to 5.5V,
10kHz / 100mV ripple		 –87
AC ACCURACY
SNR Signal-to-noise ratio  fIN = 1kHz 88 dB
SINAD Signal-to-noise + distortion  fIN = 1kHz 88 dB
THD Total harmonic distortion(5) 3V ≤ AVDD ≤ 5.5V, fIN = 1kHz,
5MHz ≤ fCLKIN ≤ 21MHz		 –108 –86 dB
DIGITAL INPUT (CMOS Logic With Schmitt-Trigger)
IIN Input current DGND ≤ VIN ≤ DVDD 0 7 μA
CIN Input capacitance 4 pF
VIH High-level input voltage 0.7 × DVDD DVDD + 0.3 V
VIL Low-level input voltage –0.3 0.3 × DVDD V
DIGITAL OUTPUT (CMOS)
CLOAD Output load capacitance 15 30 pF
VOH High-level output voltage IOH = –4mA DVDD – 0.4 V
VOL Low-level output voltage IOL = 4mA 0.4 V
POWER SUPPLY
IAVDD High-side supply current  6.0 7.7
mA
IDVDD Low-side supply current  CLOAD = 15pF 4.5 7.0
mA
AVDDUV High-side undervoltage detection threshold AVDD rising 2.4 2.6 2.8 V
AVDD falling 1.9 2.05 2.2
DVDDUV Low-side undervoltage detection threshold DVDD rising 2.3 2.5 2.7 V
DVDD falling 1.9 2.05 2.2
(1) This parameter is input referred.
(2) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.
(3) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCEO = (EO,MAX – EO,MIN) / TempRange where EO,MAX and EO,MIN refer to the maximum and minimum EO values measured within the temperature range (–40 to 125℃).
(4) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCEG (ppm) = ((EG,MAX - EG,MIN) / TempRange) x 104 where EG,MAX and EG,MIN refer to the maximum and minimum EG values (in %) measured within the temperature range (–40 to 125℃).
(5) THD is the ratio of the rms sum of the amplitudes of first five higher harmonics to the amplitude of the fundamental.