SLVSE38A April   2018  – July 2018 DRV8306

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three Phase Smart Gate Drivers
        1. 7.3.1.1 PWM Control Mode (1x PWM Mode)
        2. 7.3.1.2 Hardware Interface Mode
        3. 7.3.1.3 Gate Driver Voltage Supplies
        4. 7.3.1.4 Smart Gate Drive Architecture
          1. 7.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 7.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 7.3.1.4.3 Gate Drive Clamp
          4. 7.3.1.4.4 Propagation Delay
          5. 7.3.1.4.5 MOSFET VDS Monitors
          6. 7.3.1.4.6 VDRAIN Sense Pin
      2. 7.3.2 DVDD Linear Voltage Regulator
      3. 7.3.3 Pulse-by-Pulse Current Limit
      4. 7.3.4 Hall Comparators
      5. 7.3.5 FGOUT Signal
      6. 7.3.6 Pin Diagrams
      7. 7.3.7 Gate-Driver Protective Circuits
        1. 7.3.7.1 VM Supply Undervoltage Lockout (UVLO)
        2. 7.3.7.2 VCP Charge-Pump Undervoltage Lockout (CPUV)
        3. 7.3.7.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
        4. 7.3.7.4 VSENSE Overcurrent Protection (SEN_OCP)
        5. 7.3.7.5 Gate Driver Fault (GDF)
        6. 7.3.7.6 Thermal Shutdown (OTSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Gate Driver Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
        3. 7.4.1.3 Fault Reset (ENABLE Reset Pulse)
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Hall Sensor Configuration and Connection
        1. 8.1.1.1 Typical Configuration
        2. 8.1.1.2 Open Drain Configuration
        3. 8.1.1.3 Series Configuration
        4. 8.1.1.4 Parallel Configuration
    2. 8.2 Typical Application
      1. 8.2.1 Primary Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 External MOSFET Support
            1. 8.2.1.2.1.1 Example
          2. 8.2.1.2.2 IDRIVE Configuration
            1. 8.2.1.2.2.1 Example
          3. 8.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 8.2.1.2.3.1 Example
        3. 8.2.1.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Overview

The DRV8306 device is an integrated 6-V to 38-V gate driver for three-phase motor-drive applications. The device reduces system component count, cost, and complexity by integrating three independent half-bridge gate drivers, charge pump, and linear low-dropout (LDO) regulator for the high-side and low-side gate-driver supply voltages. A hardware interface (H/W) option allows for configuring the most commonly used settings through fixed external resistors.

The gate drivers support external N-channel high-side and low-side power MOSFETs and can drive up to 150-mA source and 300-mA sink peak currents with a 15-mA average output current. The high-side gate drive supply voltage is generated using a doubler charge-pump architecture that regulates the VCP output to VVM + 10 V. The low-side gate drive supply voltage is generated using a linear regulator from the VM power supply that regulates to 10 V. A smart gate-drive architecture provides the ability to adjust the output gate-drive current strength allowing for the gate driver to control the power MOSFET VDS switching speed. This allows for the removal of external gate drive resistors and diodes reducing BOM component count, cost, and PCB area. The architecture also uses an internal state machine to protect against gate-drive short-circuit events, control the half-bridge dead time, and protect against dV/dt parasitic turnon of the external power MOSFET.

The DRV8306 device also integrates three Hall comparators for rotor position sensing using the Hall elements. This input is used for electronically commutating the BLDC motor in trapezoidal mode. This device also has a 3.3-V LDO regulator which can be powered up to loads up to 30 mA.

In addition to the high level of device integration, the DRV8306 device provides a wide range of integrated protection features. These features include power-supply undervoltage lockout (UVLO), charge-pump undervoltage lockout (CPUV), VDS and VSENSE overcurrent monitoring (OCP), gate-driver short-circuit detection (GDF), and overtemperature shutdown (OTSD). Fault events are indicated by the nFAULT pin.

The DRV8306 device is available in a 0.4-mm pin pitch, VQFN surface-mount package. The VQFN package size is 4-mm × 4-mm.