SLVSE38A April   2018  – July 2018 DRV8306

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three Phase Smart Gate Drivers
        1. 7.3.1.1 PWM Control Mode (1x PWM Mode)
        2. 7.3.1.2 Hardware Interface Mode
        3. 7.3.1.3 Gate Driver Voltage Supplies
        4. 7.3.1.4 Smart Gate Drive Architecture
          1. 7.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 7.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 7.3.1.4.3 Gate Drive Clamp
          4. 7.3.1.4.4 Propagation Delay
          5. 7.3.1.4.5 MOSFET VDS Monitors
          6. 7.3.1.4.6 VDRAIN Sense Pin
      2. 7.3.2 DVDD Linear Voltage Regulator
      3. 7.3.3 Pulse-by-Pulse Current Limit
      4. 7.3.4 Hall Comparators
      5. 7.3.5 FGOUT Signal
      6. 7.3.6 Pin Diagrams
      7. 7.3.7 Gate-Driver Protective Circuits
        1. 7.3.7.1 VM Supply Undervoltage Lockout (UVLO)
        2. 7.3.7.2 VCP Charge-Pump Undervoltage Lockout (CPUV)
        3. 7.3.7.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
        4. 7.3.7.4 VSENSE Overcurrent Protection (SEN_OCP)
        5. 7.3.7.5 Gate Driver Fault (GDF)
        6. 7.3.7.6 Thermal Shutdown (OTSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Gate Driver Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
        3. 7.4.1.3 Fault Reset (ENABLE Reset Pulse)
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Hall Sensor Configuration and Connection
        1. 8.1.1.1 Typical Configuration
        2. 8.1.1.2 Open Drain Configuration
        3. 8.1.1.3 Series Configuration
        4. 8.1.1.4 Parallel Configuration
    2. 8.2 Typical Application
      1. 8.2.1 Primary Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 External MOSFET Support
            1. 8.2.1.2.1.1 Example
          2. 8.2.1.2.2 IDRIVE Configuration
            1. 8.2.1.2.2.1 Example
          3. 8.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 8.2.1.2.3.1 Example
        3. 8.2.1.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.1.4.4 Propagation Delay

The propagation delay time (tpd) is measured as the time between an PWM logic edge detected to the GHX / GLX transition as shown in Figure 13. This time comprises three parts consisting of the digital input deglitcher delay, the digital propagation delay, and the delay through the analog gate drivers.

The input deglitcher prevents high-frequency noise on the input pins from affecting the output state of the gate drivers. To support multiple control modes and dead time insertion, a small digital delay is added as the input command propagates through the device. Lastly, the analog gate drivers have a small delay that contributes to the overall propagation delay of the device.

In order for the output to change state during normal operation, one MOSFET must first be turned off. The MOSFET gate is ramped down according to the IDRIVE setting, and the observed propagation delay ends when the MOSFET gate falls below the threshold voltage.