SBVS032J March   2002  – July 2025 REF30 , REF30E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 REF30E
    6. 6.6 REF30
    7. 6.7 Typical Characteristics REF30E
    8. 6.8 Typical Characteristics REF30
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Supply Voltage
      2. 7.3.2 Thermal Hysteresis
      3. 7.3.3 Temperature Drift
      4. 7.3.4 Noise Performance
      5. 7.3.5 Long-Term Stability
      6. 7.3.6 Load Regulation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Negative Reference Voltage
      2. 7.4.2 Data Acquisition
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Related Links
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Overview

The REF30 is a series, precision bandgap voltage reference. The basic topology is shown in the Section 7.2. Transistors Q1 and Q2 are biased so that the current density of Q1 is greater than that of Q2. The difference of the two base-emitter voltages, Vbe1 – Vbe2, has a positive temperature coefficient and is forced across resistor R1. This voltage is gained up and added to the base-emitter voltage of Q2, which has a negative coefficient. The resulting output voltage is virtually independent of temperature. The curvature of the bandgap voltage, as shown in Figure 6-10, is due to the slightly nonlinear temperature coefficient of the base-emitter voltage of Q2.