SLLS530C April   2002  – February 2019 SN65LVDT14 , SN65LVDT41

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      SN65LVDT41 Functional Diagram
      2.      SN65LVDT14 Functional Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     SN65LVDT41 Pin Functions
    2.     SN65LVDT14 Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Receiver Electrical Characteristics
    6. 6.6  Driver Electrical Characteristics
    7. 6.7  Device Electrical Characteristics
    8. 6.8  Receiver Switching Characteristics
    9. 6.9  Driver Switching Characteristics
    10. 6.10 Typical Characteristics
      1. 6.10.1 Receiver
      2. 6.10.2 Driver
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 SN65LVDTxx Driver and Receiver Functionality
      2. 8.3.2 Integrated Termination
      3. 8.3.3 SN65LVDTxx Equivalent Circuits
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Extending a Serial Peripheral Interface Using LVDS Signaling Over Differential Transmission Cables
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 SPI Propagation Delay Limitations
        2. 9.2.2.2 Interconnecting Media
        3. 9.2.2.3 Input Fail-Safe Biasing
        4. 9.2.2.4 Power Decoupling Recommendations
        5. 9.2.2.5 PCB Transmission Lines
        6. 9.2.2.6 Probing LVDS Transmission Lines on PCB
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Microstrip vs. Stripline Topologies
      2. 11.1.2 Dielectric Type and Board Construction
      3. 11.1.3 Recommended Stack Layout
      4. 11.1.4 Separation Between Traces
      5. 11.1.5 Crosstalk and Ground Bounce Minimization
      6. 11.1.6 Decoupling
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Related Links
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.4 Power Decoupling Recommendations

Bypass capacitors must be used on power pins. Use high-frequency, ceramic (surface mount is recommended), 0.1-μF and 0.001-μF capacitors in parallel at the power supply pin with the smallest value capacitor closest to the device supply pin.

Bypass capacitors play a key role in power distribution circuitry. Specifically, they create low-impedance paths between power and ground. At low frequencies, a good digital power supply offers very low-impedance paths between its terminals. However, as higher frequency currents propagate through power traces, the source is quite often incapable of maintaining a low-impedance path to ground. Bypass capacitors are used to address this shortcoming. Usually, large bypass capacitors (10 μF to 1000 μF) at the board-level do a good job up into the kHz range. Due to their size and length of their leads, they tend to have large inductance values at the switching frequencies of modern digital circuitry. To solve this problem, one must resort to the use of smaller capacitors (nF to μF range) installed locally next to the integrated circuit.

Multilayer ceramic chip or surface-mount capacitors (size 0603 or 0805) minimize lead inductances of bypass capacitors in high-speed environments, because their lead inductance is about 1 nH. For comparison purposes, a typical capacitor with leads has a lead inductance around 5 nH.

The value of the bypass capacitors used locally with LVDS chips can be determined by Equation 1 and Equation 2 according to Johnson(1) equations 8.18 to 8.21. A conservative rise time of 200 ps and a worst-case change in supply current of 1 A covers the whole range of LVDS devices offered by Texas Instruments. In this example, the maximum power supply noise tolerated is 200 mV. However, this figure varies depending on the noise budget available in the design. (1)

1. Howard Johnson & Martin Graham.1993. High Speed Digital Design – A Handbook of Black Magic. Prentice Hall PRT. ISBN number 013395724.

Equation 1. SN65LVDT14 SN65LVDT41 equation1slls373.gif
Equation 2. SN65LVDT14 SN65LVDT41 equation2slls373.gif

Figure 20 lowers lead inductance and covers intermediate frequencies between the board-level capacitor (>10 µF) and the value of capacitance found above (0.001 µF). TI recommends that the user place the smallest value of capacitance as close to the chip as possible.

SN65LVDT14 SN65LVDT41 recLVDSbcl_slls373.gifFigure 20. Recommended LVDS Bypass Capacitor Layout