SLOS154C December 1995 – July 2025 TLC27L1 , TLC27L1A
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
| PARAMETER | TEST CONDITIONS | TA | TLC27L1I | UNIT | ||||||
|---|---|---|---|---|---|---|---|---|---|---|
| VDD = 5V | VDD = 10V | |||||||||
| MIN | TYP | MAX | MIN | TYP | MAX | |||||
| VIO | Input offset voltage | VO = 1.4V, VIC = 0V, RS = 50Ω, RI = 1MΩ |
25°C | 1.1 | 10 | 1.1 | 10 | mV | ||
| –40°C to +85°C | 13 | 13 | mV | |||||||
| αVIO | Average temperature coefficient of input offset voltage | 25°C to 85°C | 1.1 | 1 | µV/°C | |||||
| IIO | Input offset current(1)(2) | VO = VDD/2, VIC = VDD/2 | 25°C | 0.5 | 60 | 0.5 | 60 | pA | ||
| 85°C | 24 | 1000 | 26 | 1000 | pA | |||||
| IIB | Input bias current(1)(2) | VO = VDD/2, VIC = VDD/2 | 25°C | 0.6 | 60 | 0.7 | 60 | pA | ||
| 85°C | 200 | 2000 | 220 | 2000 | pA | |||||
| VICR | Common-mode input voltage range(3) | 25°C | –0.2 to +4 | –0.2 to 4.2 | –0.2 to +9 | –0.2 to +9.2 | V | |||
| –40°C to +85°C | –0.2 to +3.5 | –0.2 to +8.5 | V | |||||||
| VOH | High-level output voltage | VID = 100mV, RL = 1MΩ | 25°C | 3 | 4.1 | 8 | 8.9 | V | ||
| –40°C | 3 | 4.1 | 7.8 | 8.9 | V | |||||
| 85°C | 3 | 4.2 | 7.8 | 8.9 | V | |||||
| VOL | Low-level output voltage | VID = −100mV, IOL = 0mA | 25°C | 1 | 50 | 5 | 50 | mV | ||
| –40°C | 1 | 50 | 5 | 50 | mV | |||||
| 85°C | 1 | 50 | 5 | 50 | mV | |||||
| AVD | Large-signal differential voltage amplification | RL = 1MΩ(4) | 25°C | 50 | 520 | 50 | 870 | V/mV | ||
| –40°C | 50 | 900 | 50 | 1550 | V/mV | |||||
| 85°C | 50 | 330 | 50 | 585 | V/mV | |||||
| CMRR | Common-mode rejection ratio | VIC = VICRmin | 25°C | 65 | 87 | 65 | 94 | dB | ||
| –40°C | 60 | 85 | 60 | 93 | dB | |||||
| 85°C | 60 | 85 | 60 | 93 | dB | |||||
| kSVR | Supply voltage rejection ratio (ΔVDD/ΔVIO) | VDD = 5V to 10V, VO = 1.4V |
25°C | 70 | 97 | 70 | 97 | dB | ||
| –40°C | 60 | 97 | 60 | 97 | dB | |||||
| 85°C | 60 | 98 | 60 | 98 | dB | |||||
| II(SEL) | Offset adjustment pin input current (BIAS SELECT) |
VI(SEL) = VDD, legacy silicon | 25°C | 65 | 95 | nA | ||||
| IDD | Supply current | VO = VDD/2, VIC = VDD/2, no load | 25°C | 10 | 17 | 14 | 23 | µA | ||
| –40°C | 16 | 27 | 25 | 43 | µA | |||||
| 85°C | 17 | 13 | 10 | 18 | µA | |||||