SLIS113E October 2004 – May 2022 TPIC1021
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
Operational supply voltage(2) | 7 | 14 | 27 | V | ||
Nominal supply line voltage(2) | 7 | 14 | 18 | V | ||
VSUP undervoltage threshold(2) | 4.5 | V | ||||
ICC | Supply Current | Normal Mode, EN = 1, Bus dominant (total bus load > 500 Ω)(3) | 1.2 | 2.5 | mA | |
Standby Mode, EN = 0, Bus dominant (total bus load > 500 Ω)(3) | 1 | 2.1 | mA | |||
Normal Mode, EN = 1, Bus recessive | 300 | 500 | µA | |||
Standby Mode, EN = 0, Bus recessive | 300 | 500 | µA | |||
Low Power Mode, EN = 0, VSUP < 14 V, NWake = VSUP, LIN = VSUP | 20 | 50 | µA | |||
Low Power Mode, EN = 0, 14 V < VSUP < 27 V, NWake = VSUP, LIN = VSUP | 50 | 100 | µA | |||
RXD OUTPUT PIN | ||||||
VO | Output voltage | -0.3 | 5.5 | V | ||
IOL | Low-level output current, open drain | LIN = 0 V, RXD = 0.4 V | 3.5 | mA | ||
IIKG | Leakage current, high-level | LIN = VSUP, RXD = 5 V | -5 | 0 | 5 | µA |
TXD INPUT PIN | ||||||
VIL | Low-level input voltage(2) | -0.3 | 0.8 | V | ||
VIH | High-level input voltage(2) | 2 | 5.5 | V | ||
VIT | Input threshold hysteresis voltage(2) | 30 | 500 | mV | ||
Pull-down resistor | 125 | 350 | 800 | kΩ | ||
IIL | Low-level input current | TXD = 0 | -5 | 0 | 5 | µA |
LIN PIN (Referenced to VSUP) | ||||||
VOH | High-level output voltage(2) | LIN recessive, TXD = High, IO = 0 mA | VSUP-1V | V | ||
VOL | Low-level output voltage(2) | LIN dominant, TXD = Low, IO = 40 mA | 0 | 0.2×VSUP | V | |
Pull-up resistor to VSUP | 20 | 30 | 60 | kΩ | ||
IL | Limiting current | TXD = Low | 50 | 150 | 250 | mA |
IIKG | Leakage current | LIN = VSUP | -5 | 0 | 5 | µA |
VIL | Low-level input voltage(2) | LIN dominant | 0×VSUP | 0.4×VSUP | V | |
VIH | High-level input voltage(2) | LIN recessive | 0.6×VSUP | VSUP | V | |
VIT | Input threshold voltage(2) | 0.4×VSUP | 0.5×VSUP | 0.6×VSUP | V | |
Vhys | Hysteresis voltage(2) | 0.05×VSUP | 0.175×VSUP | V | ||
VIL | Low-level input voltage for wake-up(2) | 0 | 0.4×VSUP | V | ||
EN PIN | ||||||
VIL | Low-level input voltage(2) | -0.3 | 0.8 | V | ||
VIH | High-level input voltage(2) | 2 | 5.5 | V | ||
Vhys | Hysteresis voltage(2) | 30 | 500 | mV | ||
Pull-down resistor | 125 | 350 | 800 | kΩ | ||
IIL | Low-level input current | EN = 0 V | -5 | 0 | 5 | µA |
INH PIN | ||||||
Vo | DC output voltage | Transient voltage | -0.3 | VSUP+0.3 | V | |
IO | Output current | -50 | 2 | mA | ||
Ron | On state resistance | Between VSUP and INH, INH = 2 mA drive, Normal or Standby Mode | 25 | 40 | 100 | Ω |
IIKG | Leakage current | Low Power mode, 0 < INH < VSUP | -5 | 0 | 5 | µA |
NWake PIN | ||||||
VIL | Low-level input voltage(2) | -0.3 | VSUP-3.3 | V | ||
VIH | High-level input voltage(2) | VSUP-1 | VSUP+0.3 | V | ||
Pull-up current | NWake = 0 V | -40 | -10 | -4 | µA | |
IIKG | Leakage current | VSUP = NWake | -5 | 0 | 5 | µA |
THERMAL SHUTDOWN | ||||||
Shutdown junction thermal temperature | 185 | °C |