SLVS727E November   2006  – October 2019 TPS2410 , TPS2411

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Diagram
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
    1.     Pin Functions, PW
    2.     Pin Functions, RMS
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: TPS2410, 11
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Pins
        1. 8.3.1.1  A, C:
        2. 8.3.1.2  BYP:
        3. 8.3.1.3  FLTR:
        4. 8.3.1.4  FLTB:
        5. 8.3.1.5  GATE:
        6. 8.3.1.6  GND:
        7. 8.3.1.7  RSET:
        8. 8.3.1.8  RSVD:
        9. 8.3.1.9  STAT
        10. 8.3.1.10 UV, OV, PG:
        11. 8.3.1.11 VDD:
      2. 8.3.2 Gate Drive, Charge Pump and C(BYP)
      3. 8.3.3 Fast Comparator Input Filtering – C(FLTR)
      4. 8.3.4 UV, OV, and PG
      5. 8.3.5 Input ORing and Stat
    4. 8.4 Device Functional Modes
      1. 8.4.1 TPS2410 vs TPS2411 – MOSFET Control Methods
  9. 9 Application and Implementation
    1. 9.1 Typical Connections
      1. 9.1.1 N+1 Power Supply
      2. 9.1.2 Input ORing
    2. 9.2 Typical Application Examples
      1. 9.2.1 VDD, BYP, and Powering Options
      2. 9.2.2 Bidirectional Blocking and Protection of C
      3. 9.2.3 ORing Examples
      4. 9.2.4 Design Requirements
        1. 9.2.4.1 MOSFET Selection and R(RSET)
        2. 9.2.4.2 TPS2410 Regulation-loop Stability
      5. 9.2.5 Detailed Design Procedure
      6. 9.2.6 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Recommended Operating Range
    2. 10.2 System Design and Behavior with Transients
  11. 11Layout
    1. 11.1 Layout Considerations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.1.5 GATE:

Gate connects to the external N channel MOSFET gate. GATE is driven positive with respect to A by a driver operating from the voltage on BYP. A time-limited high current discharge source pulls GATE to GND when the fast turn-off comparator is activated. The high-current discharge is followed by a sustaining pull-down. The turn-off circuits are disabled by the thermal shutdown, leaving a resistive pull-down to keep the gate from floating. The gate connection should be kept low impedance to maximize turn-off current.