SLVSB90C January   2012  – November 2023 TPS40170-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  LDO Linear Regulators and Enable
      2. 6.3.2  Input Undervoltage Lockout (UVLO)
      3. 6.3.3  Equations for Programming the Input UVLO
      4. 6.3.4  Overcurrent Protection and Short-Circuit Protection (OCP and SCP)
      5. 6.3.5  Oscillator and Voltage Feed-Forward
        1. 6.3.5.1 Calculating the Timing Resistance (RRT)
      6. 6.3.6  Feed-Forward Oscillator Timing Diagram
      7. 6.3.7  Soft-Start and Fault-Logic
        1. 6.3.7.1 Soft-Start During Overcurrent Fault
        2. 6.3.7.2 Equations for Soft-Start and Restart Time
      8. 6.3.8  Overtemperature Fault
      9. 6.3.9  Tracking
      10. 6.3.10 Adaptive Drivers
      11. 6.3.11 Start-Up Into Pre-Biased Output
      12. 6.3.12 31
      13. 6.3.13 Power Good (PGOOD)
      14. 6.3.14 PGND and AGND
      15. 6.3.15 Bootstrap Capacitor
      16. 6.3.16 Bypass and Filtering
    4. 6.4 Device Functional Modes
      1. 6.4.1 Frequency Synchronization
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1  Select A Switching Frequency
        2. 7.2.2.2  Inductor Selection (L1)
        3. 7.2.2.3  Output Capacitor Selection (C9)
        4. 7.2.2.4  Peak Current Rating of Inductor
        5. 7.2.2.5  Input Capacitor Selection (C1, C6)
        6. 7.2.2.6  MOSFET Switch Selection (Q1, Q2)
        7. 7.2.2.7  Timing Resistor (R7)
        8. 7.2.2.8  UVLO Programming Resistors (R2, R6)
        9. 7.2.2.9  Bootstrap Capacitor (C7)
        10. 7.2.2.10 VIN Bypass Capacitor (C18)
        11. 7.2.2.11 VBP Bypass Capacitor (C19)
        12. 7.2.2.12 SS Timing Capacitor (C15)
        13. 7.2.2.13 ILIM Resistor (R19, C17)
        14. 7.2.2.14 SCP Multiplier Selection (R5)
        15. 7.2.2.15 Feedback Divider (R10, R11)
        16. 7.2.2.16 Compensation: (R4, R13, C13, C14, C21)
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Bootstrap Resistor
      2. 7.3.2 SW-Node Snubber Capacitor
      3. 7.3.3 Input Resistor
      4. 7.3.4 LDRV Gate Capacitor
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.3.12

If the output is pre-biased to a voltage higher than the voltage commanded by the reference, then the PWM switching does not start.

Note:

When output is pre-biased at VPREBIAS, that voltage also applies to the SW node during start-up. When the pre-bias circuitry commands the first few high-side pulses before the first low-side pulse is initiated, the gate voltage for the high-side MOSFET is as described in Equation 18. Alternatively, if the pre-bias level is high, it is possible that SCP can be tripped due to high the turnon resistance of the high-side MOSFET with low gate voltage. Once tripped, the device resets and then attempts to restart. The device can not be able to start up until the output is discharged to a lower voltage level either by an active load or through feedback resistors.

In the case of a high pre-bias level, a low gate-threshold-voltage-rated device is recommended for the high-side MOSFET, and increasing the SCP level also helps alleviate the problem.

Equation 18. GUID-DB3E5F3C-5128-4C0C-B305-E4E35BD3EA3E-low.gif

where

  • VGATE(hs) is the gate voltage for the high-side MOSFET.
  • VBP is the BP regulator output.
  • VDFWD is bootstrap diode forward voltage.