9 Revision History
Changes from Revision G (August 2024) to Revision H (June 2025)
- Changed MOSFET values from 13.5mΩ and 4.5mΩ to 7.8mΩ and 3.2mΩGo
- Added WEBENCH link in the Features
Go
- Updated Figure 3-1 figure to include the most recent data for the deviceGo
- Updated RDS(on)H from 13.5 mΩ to 7.8 mΩ , RDS(on)L from 4.5 mΩ to 3.2 mΩ and tUVPEN hiccup time from 7 cycles to 14 cyclesGo
- Changed IIN typ value from 600µA to 146µA and deleted IIN max
valueGo
- Changed IVINSDN typ value from 7µA to 9.3µAGo
- Changed VPGOODTH VFB falling (good) value from 107% to
108%Go
- Changed VUVP value from 68% to 70%Go
- Changed UVLO VREG5 rising voltage value from 4.3V to 4.25VGo
- Changed UVLO VREG5 falling voltage value from 3.57V to 3.52Go
- Changed UVLO, VREG5 = 4.7V VIN falling voltage, VREG5 = 4.7V value from 3.26V to
3.24VGo
- Changed UVLO, VREG5 = 4.7V VIN hysteresis, VREG5 = 4.7V value from 60mV to
80mVGo
- Changed tON min value from 54ns to 60nsGo
- Changed tSS value from 1.045ms to 1.2msGo
- Updated Figure 5-9
to Figure 5-34
to include the most recent data for the deviceGo
- Deleted High-side RDS(on) vs Temperature and Low-side RDS(on) vs Temperature figuresGo
- Changes MOSFET values from 13.5-mΩ to 7.8-mΩ and 4.5-mΩ to 3.2-mΩGo
- Changed "Zero Location" values in Table 6-1 from 7.1 to 17.8, from 14.3 to 27.1, from 21.4 to 29.8Go
- Changed wait time from 1 ms to 1 × tSS and hiccup time from 7ms to 14 × tSS
Go
- Added the
Transient Response Enhancement
sectionGo
- Added Custom Design With WEBENCH® Tools
sectionGo
- Updated
Application Curves
to include the most recent data for the
deviceGo
- Added Custom Design With WEBENCH® Tools
sectionGo
Changes from Revision F (August 2023) to Revision G (August 2024)
- Changed description "TI's smallest" to "a small" with updated products portfolio. Go
- Deleted TSDN VREG5 specGo
- Added note "Specified by design" for the SW On Time parameterGo
- Removed Out-of-Bounds Operation sectionGo
- Updated Thermal Shutdown sectionGo