SLVSI31 April 2026 TPS61371
PRODUCTION DATA
The bootstrap capacitor between the BST and SW pin supplies the gate current to charge the high-side FET device gate during the turn-on of each cycle and also supplies charge for the bootstrap capacitor. The recommended value of the bootstrap capacitor is 20nF to 200nF. CBST must be a good quality, low-ESR ceramic capacitor located at the pins of the device to minimize potentially damaging voltage transients caused by trace inductance. A value of 100nF is selected for this design example.