9 Revision History
Changes from Revision J (April 2015) to Revision K (June 2025)
- Updated the numbering format for tables, figures, and
cross-references throughout the documentGo
- Added new silicon (M3) devices to documentGo
- Changed entire document to identify the features and differences of
the legacy chip and new chip and the adjustable and fixed versions of the
deviceGo
- Changed Features, Applications, and Description
sectionsGo
- Changed front-page figure Go
- Changed Pin Configuration and Functions section: Changed DBV
pinout NR pins to NC/NR, added NC/NR pin row with reference to TPS7A20 for lower
noise performance to Pin Functions tableGo
- Added new silicon curves to
Typical Characteristics
sectionGo
- Deleted (170 µA, typically) from quiescent current discussion
in Overview sectionGo
- Changed Functional Block Diagrams sectionGo
- Changed Shutdown sectionGo
- Changed Foldback Current Limit sectionGo
- Changed Input and Output Capacitor Requirements
sectionGo
- Changed Reverse Current Operation sectionGo
- Changed input capacitor value from
0.1µF to 1µF in Detailed Design
Procedure sectionGo
- Changed Application Curves sectionGo
- Added new figures to Layout Examples sectionGo
- Added M3 information to Ordering Information
tableGo
Changes from Revision I (February 2011) to Revision J (April 2015)
- Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
- Changed fourth bullet of Features list to low noise
Go
- Changed front-page figure Go
- Added
Pin Configuration and Functions
sectionGo
- Added condition statement to
Typical Characteristics
Go
- Moved Ordering Information to Device Nomenclature section Go